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zero-c Datasheet PDF File

For zero-c Found Datasheets File :: 87968 Search Time::10.063ms
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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...RF237 Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IRF234, IRF236 IRF235, IRF237 Gate to Sou...C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...ductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate -...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...RF247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current 250 275 - 4.0 25 250 V V V A A VGS(TH) IDSS VGS = VDS, ID ...C - 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited b...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	...ductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate -...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...oltage Forward Transconductance Zero Gate Voltage Drain Current -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 IGSS I GSS Qg Qgs Qgd td...C Tj = 25C, IS = 25A, VGS = 0V Tj = 25C, IF = 25A, di/dt 100A/s VDD 50V Intrinsic turn-on ...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	...rain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Dra...C THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetit...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...t V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V T c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	... 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage V GS = 20 V Current (V DS = 0) T c = 125 o C ON () Symbol V GS(th) R DS(on) ID(on) Parameter Gate Volta...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...nce Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on dela...C) 150 175 10 Transient thermal impedance, Zth j-mb (K/W) 1 D = 0.5 0.2 0.1 0.05 0.1 ...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = ...C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

For zero-c Found Datasheets File :: 87968 Search Time::10.063ms
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