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  0.0042 Datasheet PDF File

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    hitachi
Part No. 2SD1527
OCR Text ...j Tstg 1 Rating 1000 1000 5 0.5 1.8 25 150 -55 to +150 Unit V V V A W W C C 2SD1527 Electrical Characteristics (Ta = 25C) Item Symbol Min 1000 5 -- 10 10 -- -- -- -- Typ -- -- -- -- -- -- -- 5 5 Max -- -- 10 -- -- 1.2 5 -- -- V ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 32.92K  /  6 Page

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    2SD1744

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1744
OCR Text ... Features q q q q 7.20.3 0.80.2 1.10.1 0.850.1 0.40.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct...
Description Silicon NPN epitaxial planar type

File Size 56.79K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SD1772A 2SD1772 2SD1772/2SD1772A
OCR Text ...2SB1192 and 2SB1192A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 q q Large collector power dissipation PC Full-pack package which can be installed to the heat ...
Description 2SD1772. 2SD1772A - NPN Transistor
Power Transistors

File Size 43.43K  /  3 Page

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    2SD1781K

ROHM[Rohm]
Part No. 2SD1781K
OCR Text 0.8A) 2SD1781K Features 1) Very Low VCE(sat). VCE(sat) = -0.1V(Typ.) IC / IB= 500A / 50mA 2) High current capacity in compact package. 3) Complements the 2SB1197K. External dimensions (Unit : mm) 2.90.2 1.90.2 0.95 0.95 (1) (2) 1.1+0.2 -...
Description Medium Power Transistor (32V/ 0.8A)
Medium Power Transistor (32V 0.8A)
Medium Power Transistor (32V, 0.8A)

File Size 80.71K  /  4 Page

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    hitachi
Part No. 2SD2106
OCR Text ... Max -- -- -- 10 10 20000 1.5 3.0 2.0 3.5 V V Unit V V V A Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 30.32K  /  5 Page

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    hitachi
Part No. 2SD2124
OCR Text ... 1 1 Ratings 120 120 7 1.5 3.0 18 150 -55 to +150 1.5 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 -- -- 2000 -- -- -- -- -- -- -- Typ -- -- --...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 27.49K  /  5 Page

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    hitachi
Part No. 2SD2128
OCR Text ... -- -- -- 10 10 20000 1.2 2.5 2.0 3.5 V V Unit V V V A Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, RBE = VCE = 3 V, IC = 1.5 A*1 I C = 1.5 A, IB = 3 mA*1 I C = 3 A, IB = 30 mA...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 30.47K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD2530
OCR Text ... 1.20.1 1.480.2 90 C 1.0 2.250.2 18.00.5 Solder Dip I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collec...
Description Power Transistors

File Size 46.30K  /  2 Page

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    Torex
Part No. XC2151SERIES TOR094
OCR Text ...up resistor built-in. INH, Q 0 Pin Function XC2151x51 INH/ H open L Q0 Output Output High Impedance (oscillator stopped) !0 XC2151x55 INH/ H open L H = High Level L = Low Level Q0 Output Output High Impedance (oscillator operat...
Description ICs for use with Crystal Oscillators
From old datasheet system

File Size 56.40K  /  8 Page

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    hitachi
Part No. 2SD970
OCR Text ... Typ -- -- -- -- -- -- -- -- -- 0.4 5.4 1.1 Max -- -- 100 10 20000 1.5 3.0 2.0 3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 4 A*1 I C...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 33.77K  /  5 Page

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