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  0.0169 Datasheet PDF File

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    2MBI200U4D-120

Fuji Electric
Part No. 2MBI200U4D-120
OCR Text ...max. 6.5 2.05 2.25 1.90 2.10 22 0.32 0.10 0.03 0.41 0.07 1.80 1.90 1.65 1.75 0.52 2.0 400 8.5 2.20 2.05 1.20 0.60 1.00 0.30 1.95 1.80 0.35 - Units mA nA V Tj=25 C o Tj=125 C Tj=25oC Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=200A VGE=...
Description IGBT MODULE

File Size 421.03K  /  13 Page

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    2MBI200U4H-120

Fuji Electric
Part No. 2MBI200U4H-120
OCR Text ... 6.5 a a Units mA nA V 2.0 400 8.5 a Tj=25 C o Tj=125 C o Tj=25 C Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=200A VGE=15V RG=3.0 IF=200A VGE=0V Tj=25oC o Tj=125 C o Tj=25 C o Tj=125 C Forward on voltage Reverse recovery tim...
Description IGBT MODULE

File Size 429.97K  /  13 Page

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    2MBI300S-120

Fuji Electric
Part No. 2MBI300S-120
OCR Text ...cteristics Min. Typ. Max. - - 3.0 - - 0.6 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 36000 - - 7500 - - 6600 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 Characteristics Min. Typ. - - - - - 0.0167 Conditions VGE=0V,...
Description 1200V / 300A 2 in one-package

File Size 849.74K  /  4 Page

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    2N3498L

Semicoa Semiconductor
Part No. 2N3498L
OCR Text ...se Width = 300 s, Duty Cycle 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA,...
Description Silicon NPN Transistor

File Size 55.70K  /  2 Page

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    2N7000-G 2N700007 2N7000

Supertex, Inc
Part No. 2N7000-G 2N700007 2N7000
OCR Text ... (min) (mA) TO-92 60 5.0 75 -G indicates package is RoHS compliant (`Green') Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Solder...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 520.80K  /  5 Page

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    2N7002DW1

Pan Jit International Inc.
Part No. 2N7002DW1
OCR Text ... 11 5 800 200 120 -5 5 to + 1 5 0 625 U ni t s V V mA mA mW O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Juncti on-to Ambi ent Thermal Resi stance(...
Description 60V N-Channel Enhancement Mode MOSFET

File Size 161.84K  /  5 Page

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    2N7002DW

Pan Jit International Inc.
Part No. 2N7002DW
OCR Text ... 11 5 800 200 120 -5 5 to + 1 5 0 625 U ni t s V V mA mA mW O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Juncti on-to Ambi ent Thermal Resi stance(...
Description 60V N-Channel Enhancement Mode MOSFET

File Size 170.50K  /  5 Page

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    2N7002DW

TRANSYS Electronics Limited
Part No. 2N7002DW
OCR Text 0.2 W (Tamb=25) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 MOSFET (N-Channel) ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise sp...
Description Plastic-Encapsulated Transistors

File Size 108.72K  /  1 Page

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    2N7002

Galaxy Semi-Conductor Holdings Limited
Part No. 2N7002
OCR Text ...1 2.5 100 -100 1 A 500 500 2700 0.6 0.09 80 320 1.2 1.7 1.7 2.4 0.88 20 7.5 13.5 7.5 13.5 1.5 50 25 5 20 20 ns ns pF 3.75 1.5 mA V mS TYP MAX UNIT V nA Static drain-Source on-resistance RDS(ON) Drain-Source diode forward voltag...
Description Small Signal MOSFET Transistor

File Size 222.96K  /  4 Page

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    2SA1020

Weitron Technology
Part No. 2SA1020
OCR Text 0 1 900 7.25 138 2SA1020=A1020 -10 -50 -0.1 -0.1 u u -40 -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max...
Description PNP General Purpose Transistors

File Size 411.54K  /  5 Page

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