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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4617
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| OCR Text |
...
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maxi... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
138.94K /
7 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6415L AO6415
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| OCR Text |
...ximum -20 12 -3.3 -2.7 -14 1.25 0.8 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junctio... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
105.05K /
4 Page |
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it Online |
Download Datasheet |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6420
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| OCR Text |
...urrent TJ=125C 1 20 50 85 60 13 0.78 1 3 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 25 1.65 9.5 VGS=10V, VDS=30V, I D=4.2A 4.3 1.6 2.2 5.1 VGS=10V, VDS=30V, RL=7, RGEN=3 IF=4.2A, dI/dt=100A/s IF=4.2A, dI/dt=100A/s 2.6 15.9 2 25.1... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
123.15K /
4 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6704L AO6704
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| OCR Text |
...TKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
D
K
16 25 34
G S A
Absolute Maximum Ratings T A=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain C... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
163.16K /
5 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6802L AO6802
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| OCR Text |
...
Maximum 30 20 3.1 2.4 12 1.15 0.73 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maxim... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.05K /
4 Page |
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it Online |
Download Datasheet |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP609L AOP609
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| OCR Text |
... TJ=125C 1.5 20 2.4 49 65 57 17 0.78 Min 60 1 5 250 3 60 75 1 3.5 570 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capac... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
142.84K /
7 Page |
View
it Online |
Download Datasheet |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP804L AOP804
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| OCR Text |
...urrent TJ=125C 1 20 42 75 54 11 0.78 1 4 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 25 1.65 8.5 VGS=10V, VDS=30V, ID=4.7A 4.3 1.6 2.2 5.1 VGS=10V, VDS=30V, RL=6, RGEN=3 IF=4.7A, dI/dt=100A/s
2
Min 60
Typ
Max
Units V
... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
106.15K /
4 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP2451GY
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| OCR Text |
...ing N-channel 20 12 5 4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -20 12 -3.7 -3 -20
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Da... |
| Description |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
96.99K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80AM75SCG
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| OCR Text |
... rated
Q1 G1 OUT S1
Q2 G2 0/VBUS
S2
*
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy dr... |
| Description |
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
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| File Size |
297.18K /
7 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50DHM75TG
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| OCR Text |
...
G1 S1 OUT1 OUT2 Q4
CR2 G4 0/VBUS SENSE S4 0/VBUS NT C2
NTC1
VBUS SENSE
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
... |
| Description |
Asymmetrical - Bridge MOSFET Power Module 46 A, 500 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
283.17K /
6 Page |
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it Online |
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Price and Availability
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