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  0.80 1.55v Datasheet PDF File

For 0.80 1.55v Found Datasheets File :: 2191    Search Time::1.531ms    
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    IRF1010ZLPBF IRF1010ZPBF IRF1010ZSPBF

International Rectifier
Part No. IRF1010ZLPBF IRF1010ZPBF IRF1010ZSPBF
OCR Text ...RF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units A Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silic...80 T J = 175C 100 60 T J = 25C 40 10 20 VDS = 10V 20s PULSE WIDTH 0 0 20 40 60 80 ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 352.55K  /  13 Page

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    IRF1405Z IRF1405ZL IRF1405ZS

International Rectifier
Part No. IRF1405Z IRF1405ZL IRF1405ZS
OCR Text ...nt, steady state)i Typ. --- 0.50 --- --- Max. 0.65 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...80% VDSS . 2 www.irf.com IRF1405Z/S/L 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5...
Description    AUTOMOTIVE MOSFET
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 286.46K  /  12 Page

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    ST Microelectronics
Part No. STB60N55F3
OCR Text ... ds drain-source voltage (v gs =0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25c 80 42 a i d drain current (continuous) at t c = 100c 56 30 a i dm (1) 1. pulse width limited by safe operating area drai...
Description N-CHANNEL Power MOSFET

File Size 635.77K  /  20 Page

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    IRF7N1405

International Rectifier
Part No. IRF7N1405
OCR Text ...1405 BVDSS 55V RDS(on) ID 0.0053 55A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced proc...80 20 90 200 150 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID =...
Description 55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)

File Size 134.97K  /  7 Page

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    IRF7N140507

International Rectifier
Part No. IRF7N140507
OCR Text ... N-CHANNEL 55V RDS(on) ID 0.0053 55A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced proc...80 20 90 200 150 -- V V/C V S A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0m...
Description HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

File Size 192.99K  /  7 Page

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    AUIRF1010Z AUIRF1010ZL AUIRF1010ZS AUIRF1010ZSTRL AUIRF1010ZSTRR

International Rectifier
Part No. AUIRF1010Z AUIRF1010ZL AUIRF1010ZS AUIRF1010ZSTRL AUIRF1010ZSTRR
OCR Text ...rrent Max. 94 66 75 360 140 0.90 20 130 180 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A Power Dissipation Linear Derating ...80% VDSS . This value determined from sample failure population, starting TJ = 25C, L = 0.05mH,...
Description HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET

File Size 357.61K  /  15 Page

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    IRF5N320505 IRF5N3205

IRF[International Rectifier]
Part No. IRF5N320505 IRF5N3205
OCR Text ...3205 BVDSS 55V RDS(on) ID 0.008 55A* Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced process...80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics F...
Description HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

File Size 168.17K  /  7 Page

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    IRLL024Z

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRLL024Z
OCR Text ...ipation Parameter Max. 5.0 4.0 40 2.8 1.0 0.02 16 Units A Power Dissipation Linear Derating Factor Gate-to-Source Voltage ...80 100 3.0 --- 20 250 200 -200 11 --- --- --- --- --- --- --- --- --- --- --- --- V V/C m V S A nA ...
Description 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
AUTOMOTIVE MOSFET 汽车MOSFET

File Size 270.79K  /  10 Page

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    L4978D

STMicroelectronics
Part No. L4978D
OCR Text ...sistor (with a typical Rdson of 0.25) to obtain very high efficency and high switching speed. TYPICAL APPLICATION CIRCUIT Vi=8V to 55V 5 R1...80 57 2.5 3 Oscillator Section Ramp Valley Ramp peak Maximum duty cycle Maximum Frequency Vcc...
Description 2A STEP DOWN SWITCHING REGULATOR

File Size 134.51K  /  12 Page

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