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  1.3-ghz Datasheet PDF File

For 1.3-ghz Found Datasheets File :: 33961    Search Time::4.797ms    
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    ATF-10100 ATF-10100-GP3

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-10100 ATF-10100-GP3
OCR Text ... Parameters and Test Conditions[1] Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz ...3.0 12.0 Min. Typ. Max. 0.4 0.55 0.8 17.0 14.0 12.0 21.0 15.0 140 130 -1.3 180 -0.8 0.7 GA Gai...
Description 0.5-12 GHz Low Noise Gallium Arsenide FET

File Size 46.17K  /  4 Page

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    ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text ...eel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect tr...3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 50...
Description ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET

File Size 41.86K  /  3 Page

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    ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text ...eel Packaging Option Available [1] Description The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect tr...3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 50...
Description ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET

File Size 42.09K  /  3 Page

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ...utput Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape...3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 5...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

File Size 44.24K  /  4 Page

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text 1.1 dB Typical at 12 GHz * High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven ...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

File Size 38.39K  /  3 Page

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text 1.4 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effe...3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization sys...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 41.75K  /  3 Page

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text 1.8 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ce...3 micron gate length with a total gate periphery of 36 micro-X Package 250 microns. Proven gol...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 44.11K  /  4 Page

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ... MSG 137 GATE DRAIN 1 3 GAIN (dB) 15 MAG 10 S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS ...
Description Surface Mount Gallium Arsenide FET for Oscillators

File Size 43.73K  /  3 Page

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text ...utput Power: 23.0 dBm Typical P 1 dB at 4 GHz * Hermetic Gold-Ceramic Microstrip Package housed in a hermetic, high reliability package. ...3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization sys...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

File Size 41.90K  /  3 Page

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text ...Reel Packaging Option Available[1] Note: 1. Refer to "Tape-and-Reel Packaging for Surface Mount Semiconductors". 30 Description Hewlet...3 2 SOURCE 20 GAIN (dB) MSG MAG 10 S 21 0 0.1 1 FREQUENCY (GHz) 10 This GaAs F...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

File Size 67.13K  /  8 Page

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