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  1.5 1.9ghz Datasheet PDF File

For 1.5 1.9ghz Found Datasheets File :: 953    Search Time::3.5ms    
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    Sanyo
Part No. 2SC4407
OCR Text ...9B [2SC4407] 0.425 0.3 3 0~0.1 * High cutoff frequency : fT=3.0GHz typ * High power gain : PG=12dB typ (f=0.9GHz) * Small noise figure...5 3.0 0.7 0.45 1.0 Conditions Ratings min typ max 0.1 10 200* GHz pF pF Unit A A * : The 2SC4407 ...
Description NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications

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    CXG7001FN

SONY[Sony Corporation]
Part No. CXG7001FN
OCR Text ...DD = 150mA (POUT = 20.2dBm, f = 1.9ghz) * High power gain: Gp = 39dB Typ. (POUT = 20.2dBm, f = 1.9ghz) <Antenna switch receiver block/ low n...5.5mA Typ. (When no signal) * High conversion gain: Gc = 20.5dB Typ. (f = 1.9ghz) * Low distortion: ...
Description Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS

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    New Japan Radio Co., Ltd.
Part No. NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJG1553F-C5 NJG1553F-C6 NJG1553F-C1 NJG1553F-L4 NJG1553F-C8 NJG1553F-C2 NJG1553F-L3 NJG1553F-L7 NJG1553F-L5 NJG1553F-L2 NJG1553F-L1 NJG1553F-R3 NJG1553F-R2
OCR Text 1.5GHz/1.9ghz MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1553F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noi...5/1.9Hz band digital mobile phone and PHS handsets. The very small MTP package is adopted. NJG1553F ...
Description 1.5GHz/1.9ghz Mixer GaAs MMIC(1.5GHz/1.9ghz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机
1.5ghZ/1.9ghz mixer gAaS mmic 1.5ghZ/1.9ghz砷化镓MMIC混频

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    Sanyo
Part No. 2SC4404
OCR Text ...9B [2SC4404] 0.425 0.3 3 0~0.1 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=2.2dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4404applied sets to b...
Description NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications

File Size 112.71K  /  5 Page

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...ration BFP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter ...5 mW 30 150 - 65 ... + 150 - 65 ... + 150 875 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA T...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

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    Infineon
Part No. BGB550E6327
OCR Text ...r bgb550 preliminary vpw05980 1 2 3 5 4 b, 1 e, 2, 5 c, 4 bias, 3 features  ideal for driver appliciations  small sct595 package  open collector output  typical supply voltage: 1.4-4.3v  current easy adjustable by an external resisto...
Description MMIC, Driver Amplifier

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    MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
Part No. MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text 19-3404; Rev 0; 9/04 KIT ATION EVALU ABLE AVAIL LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measureme...5.25V* power supply and is specified over the extended -40C to +85C temperature range. The MAX2016 i...
Description 2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ation BFR 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA T...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    Sanyo
Part No. 2SA1669 0112
OCR Text ...IC=-3mA, f=0.9GHz 5.0 11 2.0 15 1.5 3.0 1.0 0.7 1.5 GHz pF pF dB dB dB Conditions Ratings min typ max -0.1 -0.1 Unit A A Note) Marking : DB Any and all SANYO products described or contained herein do not have specifications that can h...
Description PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ...1mA to 20mA. * fT = 8GHz F = 1.2dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic dischar...5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

File Size 53.54K  /  6 Page

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For 1.5 1.9ghz Found Datasheets File :: 953    Search Time::3.5ms    
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