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  10.00-10.70 Datasheet PDF File

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...gcont Qgs1 Qgs2 Qgd QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 17.6 1.2 +/- 100 14 17 nA 5.2 21.6 VDS = 16V, VGS = 0 Schottky Diode ...00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...40 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Gate -to -Source Voltage (V) Fig 5. Normali...00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S I...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...40 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Gate -to -Source Voltage (V) Fig 5. Normali...00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S I...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...ange Soldering Temperature, for 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A...00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) P-CHANNEL POWER MOSFET D 38.61 (1.52) 39.12 (1.54) 0.97...00 IRF9240 IRF9240-SMD ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS VGS(TH) I...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...S = 15V 7.4 VGS = 10V, See Fig. 10 15 VDD = 25V 17 ID = 1.0A ns 46 RG = 6.0, VGS = 10V 34 RD = 25 --- VGS = 0V --- pF VDS = 25V --- = 1.0...00 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V G S - Gate-to-Source V olta ge (V ) Star...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...ange Soldering Temperature, for 10 seconds Max. -6.8 -4.8 -27 3.8 48 0.32 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) U...00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text 10.41 10.67 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1...00 IRF9530-220M ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDS...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.21K  /  2 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Intelligent Copy-Back * Unique ID for Copyright Protection * Power-O...00 0.472 0.05 0.002 MIN 0.125 0.035 0~8 0.45~0.75 0.018~0.030 ( 0.50 ) 0.020 4 ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Intelligent Copy-Back * Unique ID for Copyright Protection * Package...00 0.472 0.05 0.002 MIN 0.125 0.035 0~8 AE 0.45~0.75 0.018~0.030 ( 0.50 ) 0.020 4 ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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