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  115ma Datasheet PDF File

For 115ma Found Datasheets File :: 264    Search Time::1.391ms    
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    DMN601DMK07

Diodes Incorporated
Part No. DMN601DMK07
OCR Text ...=10V, ID = 200mA VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.co...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 152.00K  /  4 Page

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    DMN601DWK07 DMN601DWK-7

Diodes Incorporated
http://
Diodes, Inc.
Part No. DMN601DWK07 DMN601DWK-7
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php....
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
3.3V, Full Duplex, 10Mbps, EIA RS-485 Transceiver 305 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 151.29K  /  4 Page

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    DMN601VK07

Diodes Incorporated
Part No. DMN601VK07
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.co...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 236.99K  /  4 Page

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    DMP210DUDJ DMP210DUDJ-7

Diodes Incorporated
Part No. DMP210DUDJ DMP210DUDJ-7
OCR Text ...10V, ID = -0.2A VGS = 0V, IS = -115ma VDS = -15V, VGS = 0V f = 1.0MHz NEW PRODUCT Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward T...
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 125.33K  /  6 Page

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    2N7002-7-F

Diodes Incorporated
Part No. 2N7002-7-F
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad la...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 81.82K  /  5 Page

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    DMN5L06TK-7

Diodes Incorporated
Part No. DMN5L06TK-7
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz @ TC = 25C VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss 0.49 0.5 200 0.5 1.8 1.5 1.2 1.4 Device mounted on FR-4 PCB. No purposefully added l...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 155.37K  /  4 Page

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    CMLM8205

Central Semiconductor Corp
Part No. CMLM8205
OCR Text ...0mA VGS=5.0V, ID=50mA VGS=0, IS=115ma VGS=10V, ID=500mA VGS=10V, ID=500mA, TJ=125C VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125C VDS =10V, ID=200mA 200 VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=1...
Description SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE

File Size 579.14K  /  2 Page

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    K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6R4008V1D-JC08 K6R4008V1D-JC10 K6R4008V1D-JI08 K6R4008V1D-JI10 K6R4008V1D-KC08 K6R4008V1D-KC10 K6R4008V1D-KI08 K6R4008V1D-KI10 K6R4008V1D-TC08 K6R4008V1D-TC10 K6R4008C1D-JC10 K6R4016C1D-EC10 K6R4016C1D-EC8 K6R4016C1D-EI10 K6R4016C1D-EI8 K6R4016C1D-EL10 K6R4016C1D-EL8 K6R4016C1D-EP10 K6R4016C1D-EP8 K6R4016C1D-JC8 K6R4016C1D-JI10 K6R4016C1D-JI8 K6R4016C1D-JL10 K6R4016C1D-JL8 K6R4016C1D-JP10 K6R4016C1D-UP8 K6R4004C1D-JC10 K6R4004C1D-JI10 K6R4004C1D-KC10 K6R4004C1D-KI10 K6R4004V1D-JC08 K6R4004V1D-JC10 K6R4004V1D-JI08 K6R4004V1D-JI10 K6R4004V1D-KC08 K6R4004V1D-KC10 K6R4004V1D-KI08 K6R4004V1D-KI10 K6R4008C1D-JI10 K6R4008C1D-KC10 K6R4008C1D-KI10 K6R4008C1D-TC10 K6R4008C1D-TI10 K6R4008C1D-UC10 K6R4008C1D-UI10 K6R4008V1D-TI08 K6R4008V1D-UC08 K6R4008V1D-UC10 K6R4008V1D-UI08 K6R4016C1D K6R4016C1D-JP8 K6R4016C1D-KC10 K6R4016C1D-KC8 K6R4016C1D-KI10 K6R4016C1D-KI8 K6R4016C1D-KL10 K6R4016C1D-KL8 K6R4016C1D-KP10 K6R4016C1D-KP8 K6R4016C1D-TC10 K6R4016C1D-TC8 K6R4016C1D-TI10 K6R4016C1D-TI8 K6R4016C1D-TL10 K6R4016C1D-TL8 K6R4016C1D-TP10 K6R4016C1D-TP8 K6R4016C1D-UC10 K6R4016C1D-UC8 K6R4016C1D-UI10 K6R4016C1D-UI8 K6R4016C1D-UL10 K6R4016C1D-UL8 K6R4016C1
OCR Text ...ns 15ns Previous 90mA 80mA 70mA 115ma 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 Septermber.28. 2001 November, 3, 2001 Remark Preliminary Preliminary Preliminary ICC(Industrial) ISB ...
Description 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作)。在经营商业和工业温度范围
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作)。在经营商业和工业温度范围
CAP,ELECTRO,1000UF,25V
DIODE,RECT,1A 400V SMD MELF
PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk

File Size 138.58K  /  12 Page

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    DMN601DWK DMN601DWK-7

DIODES[Diodes Incorporated]
Part No. DMN601DWK DMN601DWK-7
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma 5. Short duration test pulse used to minimize self-heating effect. 1.4 VGS = 10V 8V 6V 5V 4V 3V 1.00 10V 8V 6V 5V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 126.84K  /  4 Page

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    DMN2004WK-7 DMN2004WK09

Diodes Incorporated
Part No. DMN2004WK-7 DMN2004WK09
OCR Text ... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.co...
Description N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 167.63K  /  4 Page

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For 115ma Found Datasheets File :: 264    Search Time::1.391ms    
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