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1200v 200a Datasheet PDF File

For 1200v 200a Found Datasheets File :: 865 Search Time::1.672ms
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				Fuji Electric
Part No.	1MBI400S-120
OCR Text	1200v / 400A 1 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applicat...200a 200 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitt...
Description	1200v / 400A 1 in one-package IGBT Module
File Size	362.15K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	8EWS08SPBF 8EWS12STRRPBF 8EWS08STR 8EWS08STRL 8EWS08STRLPBF 8EWS08STRPBF 8EWS08STRR 8EWS08STRRPBF 8EWS12SPBF 8EWS12STR 8EWS12STRL 8EWS12STRLPBF 8EWS12STRPBF 8EWS12STRR
OCR Text	...10A IFSM = 200a VRRM = 800V, 1200v Output Current in Typical Applications Applications NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz (140m) copper Aluminum IMS, RthCA = 15C/W Aluminum IMS with heatsink, RthCA = 5C/W TA = 55C, T...
Description	SURFACE MOUNTABLE INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) 表面贴装输入整流器二极管无铅（“皆不”后缀 SURFACE MOUNTABLE INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) SURFACE MOUNTABLE INPUT RECTIFIER DIODE Lead-Free (PbF suffix)
File Size	208.67K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	RURD4120S RURD4120 UR4120 RURD4120S9A
OCR Text	1200v Ultrafast Diodes The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics (trr < 70ns). They have low forwa...200a/s IF = 4A, dIF /dt = 200a/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw...
Description	4A, 1200v UltraFast Diode; ; No of Pins: 2; Container: Tape & Reel 4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252 4A, 1200v Ultrafast Diodes
File Size	350.11K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FGL40N120AND06 FGL40N120AND
OCR Text	1200v NPT IGBT January 2006 FGL40N120AND 1200v NPT IGBT Features * High speed switching * Low saturation voltage : VCE(sat) = 2.6 V...200a/s TC = 25C TC = 125C TC = 25C TC = 125C Min. --------- Typ. 3.2 2.7 75 130 8 13 300 845...
Description	1200v NPT IGBT
File Size	725.07K / 9 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	MG200Q2YS60A
OCR Text	1200v/200a 2in1) High Power Switching Applications Motor Control Applications * * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes...
Description	High Power Switching Applications Motor Control Applications
File Size	96.07K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	16TTS..S
OCR Text	...M TO-220 FULLPAK 08 = 800V 12 = 1200v 16 = 1600V 1 (K) (G) 3 6 www.irf.com 13.7 13.5 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR I...
Description	SURFACE MOUNTABLE PHASE CONTROL SCR
File Size	87.72K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Fuji Electric
Part No.	2MBI200S-120
OCR Text	1200v / 200a 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * ...
Description	1200v / 200a 2 in one-package
File Size	495.88K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Powerex Power Semiconductors
Part No.	CM100DU-24F CM100DU-24H
OCR Text	...e table - i.e. CM100DU-24F is a 1200v (VCES), 100 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) ...200a 2 80 40 8.5 2 1 IC = 100A IC = 40A 1 8 0 0 1 2 3 4 COLLECTOR-EMITTER V...
Description	Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
File Size	103.58K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM100DU-24H
OCR Text	...e table - i.e. CM100DU-24H is a 1200v (VCES), 100 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 100 V CES Volts (x 50)...200a/s IE = 100A, diE/dt = -200a/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. -...
Description	Dual IGBTMOD 100 Amperes/1200 Volts
File Size	57.34K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM100TU-24H
OCR Text	...e table - i.e. CM100TU-24H is a 1200v (VCES), 100 Ampere SixIGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 Sep.199...200a/s IE = 100A, diE/dt = -200a/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. -...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	50.07K / 4 Page	View it Online	Download Datasheet

For 1200v 200a Found Datasheets File :: 865 Search Time::1.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |