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  16mbm x 18bits dcd burst sram1 Datasheet PDF File

For 16mbm x 18bits dcd burst sram1 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Part No. IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85BG IDT71V2579S75BGI IDT71V2579SA75BGI IDT71V2579S85BGI IDT71V2579S80BGI IDT71V2577YS80PFI IDT71V2577YS75PFI IDT71V2577YSA75PF IDT71V2577YSA85PF IDT71V2577YS85PFI IDT71V2577YSA80PFI IDT71V2577YSA85PFI IDT71V2577YSA75PFI IDT71V2579SA80PFI IDT71V2577SA75BG IDT71V2579YSA75BG IDT71V2579YSA80BQI IDT71V2579S85BQI
Description 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 128K x 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器,单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 128K x 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 128K x 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 128K x 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 256K x 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs burst Counter,Single Cycle Deselect 256K x 18 CACHE SRAM, 8 ns, PBGA165

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    SGS Thomson Microelectronics
ST Microelectronics
意法半导
Part No. M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB6T M58WR064ETZB M58WR064ET70ZB6T M58WR064EBZB M58WR064ET10ZB6T M58WR064EB80ZB6T M58WR064EB70ZB6T M58WR064EB10ZB6T
Description 64 Mbit 4Mb x 16 / Multiple Bank / burst 1.8V Supply Flash Memory
64 Mbit 4Mb x 16, Multiple Bank, burst 1.8V Supply Flash Memory
HDR P R 4P PW N 1x4 .100TQ
BERGSTRIP .100CC SR STRAIGHT

File Size 682.65K  /  82 Page

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38230G4-xxxFP M38230G4-xxxHP M38231G4-xxxHP M38232G4-xxxFP M38232G4-xxxHP M38233G4-xxxFP M38233G4-xxxHP M38234G4-xxxFP M38234G4-xxxHP M38235G4-xxxFP M38230G6-xxxFP M38230G6-xxxHP M38231G6-xxxFP M38231G6-xxxHP M38232G6-xxxFP M38232G6-xxxHP M38233G6-xxxFP M38233G6-xxxHP M38234G6-xxxFP M38234G6-xxxHP M38235G6-xxxFP M38235G6-xxxHP M38236G6-xxxHP M38237G6-xxxFP M38237G6-xxxHP M38238G6-xxxFP M38230G7-xxxFP M38230G7-xxxHP M38231G7-xxxFP M38231G7-xxxHP M38232G7-xxxFP M38232G7-xxxHP M38233G7-xxxFP M38233G7-xxxHP M38234G7-xxxFP M38234G7-xxxHP M38235G7-xxxFP M38235G7-xxxHP M38236G7-xxxFP M38236G7-xxxHP M38237G7-xxxFP M38237G7-xxxHP M38238G7-xxxFP M38238G7-xxxHP M38239G7-xxxFP M38239G7-xxxHP M38230G8-xxxFP M38230G8-xxxHP M38231G8-xxxFP M38231G8-xxxHP M38232G8-xxxFP M38232G8-xxxHP M38233G8-xxxFP M38233G8-xxxHP M38234G8-xxxFP M38234G8-xxxHP M38235G8-xxxFP M38235G8-xxxHP M38236G8-xxxFP M38236G8-xxxHP M38237G8-xxxFP M38237G8-xxxHP M38238G8-xxxFP M38238G8-xxxHP M38230GA-xxxFP M38230GA-xxxHP M38231GA-xxxFP M38231GA-xxxHP M38232GA-xxxFP M38232GA-xxxHP M38233GA-xxxFP M38233GA-xxxHP M38234GA-xxxFP M38234GA-xxxHP M38235GA-xxxFP M38235GA-xxxHP M38236GA-xxxFP M38236GA-xxxHP M38237GA-xxxFP M38237GA-xxxHP
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

File Size 901.80K  /  76 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1525V18-200BZC CY7C1525V18-250BZC CY7C1514V18
Description 72-Mbit QDR-IISRAM 2-Word burst Architecture 8M x 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word burst Architecture 72兆位QDR - II型⑩SRAM2字突发结

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Part No. AS7C33256P AS7C33256PFD18B AS7C33256PFD18BV.1.2 AS7C33256PFD18B-200TQIN AS7C33256PFD18B-133TQC AS7C33256PFD18B-133TQCN AS7C33256PFD18B-133TQI AS7C33256PFD18B-133TQIN AS7C33256PFD18B-166TQC AS7C33256PFD18B-166TQCN AS7C33256PFD18B-166TQI AS7C33256PFD18B-166TQIN AS7C33256PFD18B-200TQC AS7C33256PFD18B-200TQCN AS7C33256PFD18B-200TQI
Description 3.3V 256K x 18 pipeline burst synchronous SRAM 256K x 18 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 256K 】 18 pipeline burst synchronous SRAM
Sync SRAM - 3.3V
From old datasheet system

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    AS7C252MPFD18A AS7C252MPFD18A_V1.1 AS7C252MPFD18A-133TQC AS7C252MPFD18A-133TQCN AS7C252MPFD18A-133TQI AS7C252MPFD18A-133

INTEGRATED SILICON SOLUTION INC
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
Part No. AS7C252MPFD18A AS7C252MPFD18A_V1.1 AS7C252MPFD18A-133TQC AS7C252MPFD18A-133TQCN AS7C252MPFD18A-133TQI AS7C252MPFD18A-133TQIN AS7C252MPFD18A-166TQC AS7C252MPFD18A-200TQC AS7C252MPFD18A-200TQI AS7C252MPFD18A-200TQIN AS7C252MPFD18A-200TQCN AS7C252MPFD18A-166TQIN AS7C252MPFD18A-166TQCN AS7C252MPFD18A-166TQI
Description 2.5V 2M x 18 pipelined burst synchronous SRAM 2M x 18 STANDARD SRAM, 3.1 ns, PQFP100
2.5V 2M x 18 pipelined burst synchronous SRAM 2M x 18 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 2M x 18 pipelined burst synchronous SRAM 2M x 18 STANDARD SRAM, 3.5 ns, PQFP100
From old datasheet system
Sync SRAM - 2.5V

File Size 490.16K  /  18 Page

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    GSI Technology, Inc.
Part No. GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS816272CGC-300 GS816272CC-150I
Description 256K x 72 18Mb S/dcd Sync burst SRAMs 256K x 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/dcd Sync burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/dcd Sync burst SRAMs 256K x 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/dcd Sync burst SRAMs 256K x 72 CACHE SRAM, 7.5 ns, PBGA209

File Size 673.04K  /  31 Page

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    AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A-133TQC AS7C25512PFD32A-133TQCN AS7C25512PFD32A-133TQI AS7C25512PFD32A

Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
Part No. AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A-133TQC AS7C25512PFD32A-133TQCN AS7C25512PFD32A-133TQI AS7C25512PFD32A-133TQIN AS7C25512PFD32A-166TQC AS7C25512PFD32A-166TQCN AS7C25512PFD32A-166TQI AS7C25512PFD32A-166TQIN AS7C25512PFD36A-133TQC AS7C25512PFD36A-133TQCN AS7C25512PFD36A-166TQCN AS7C25512PFD36A-166TQI AS7C25512PFD36A-133TQI AS7C25512PFD36A-133TQIN
Description 2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K x 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K x 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V

File Size 505.47K  /  19 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-300BZI CY7C1163V18-300BZC CY7C1165V18-300BZxC CY7C1165V18-333BZxC CY7C1165V18-333BZC CY7C1165V18-333BZI CY7C1165V18-333BZxI CY7C1165V18-300BZI CY7C1165V18-300BZC CY7C1165V18-300BZxI CY7C1163V18-333BZI CY7C1176V18-333BZxI CY7C1176V18-300BZxI CY7C1176V18-300BZC CY7C1163V18-300BZxC
Description 18-Mbit QDRII SRAM 4-Word burst Architecture (2.5 Cycle Read Latency) 2M x 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word burst Architecture (2.5 Cycle Read Latency)

File Size 949.91K  /  29 Page

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    W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P240AF-6A

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P240AF-6A
Description From old datasheet system
64K x 64 burst PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM

File Size 164.84K  /  14 Page

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