...it: mm
6.90.1
0.4
q q q
2.40.2 2.00.2 3.50.1
Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (T...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
...A
Unit: mm
s Features
q q
2.60.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB...3.00.15 3 2 1
4.0-0.20
0.40.04
emitter voltage 2SB766A Emitter to base voltage Peak collect...
... Features
q q q
4.50.1 1.60.2
1.50.1
Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type packa...3.00.15
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Co...
2
4.00.2
High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted.
s Absolute M...3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current C...
Description
Silicon PNP epitaxial planer type(For low-frequency amplification) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
...lementary to 2SD958
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base v...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...A
Unit: mm
s Features
q q
2.60.1
4.50.1 1.60.2
1.50.1
0.4max.
45
s Absolute Maximum Ratings
Parameter Collector to bas...3
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15 2 1
4.0-0.20
0.40.04
emitter voltage 2SB...