20-100a pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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20-100a Datasheet PDF File

For 20-100a Found Datasheets File :: 33350 Search Time::2.594ms
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				Fuji Electric
Part No.	6MBI100VB-120-50
OCR Text	...00 v gate-emitter voltage v ges 20 v collector current ic continuous tc=80c 100 a ic pulse 1ms tc=80c 200 -ic 100 -ic pulse 1ms 200 collecto...100a tj=25c - 2.30 2.75 v tj=125c - 2.60 - tj=150c - 2.65 - v ce (sat) (chip) v ge = 15v i c = 100...
Description	IGBT MODULE (V series) 1200V / 100A / 6 in one package
File Size	369.01K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Absolute Maximum Ratings Parameter N-Channel I...100A/s -- 58 120 nC P-Channel T J = 25C, I F = -1.25A, di/dt = 100A/s -- 91 180 Intrinsic turn-on ti...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	1MBI100U4F-120L-50
OCR Text	...00 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 150 a tc=80c 100 ic pulse 1ms tc=25c 300 tc=80c 200 -ic 50 -ic p...100a tj=25c - 2.05 2.20 v tj=125c - 2.25 - v ce (sat) (chip) tj=25c - 1.90 2.05 tj=125c - 2.10 -...
Description	IGBT MODULE (U series) 1200V / 100A / 1 in one package
File Size	412.73K / 7 Page	View it Online	Download Datasheet

				Fuji Electric Holdings Co., Ltd.
Part No.	1MBH50D-060
OCR Text	...v gate -emitter voltage v ges 20 v dc t c = 25c i c 25 82 collector current dc t c =100c i c 100 50 a 1ms t c = 25c i c pulse 328 igbt m...100a/ s 300 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j...
Description	Fuji Discrete Package IGBT 82 A, 600 V, N-CHANNEL IGBT
File Size	276.94K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGT100SK60T3AG
OCR Text	20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 29/30/31/32 must be shorted together pins 26/27/28/22/23/25 must be short...100a @ tc = 100c aptgt100sk60t3ag aptgt100sk60t3ag ? rev 0 may, 2009 www.microsemi.com 2...
Description	Buck chopper Trench Field Stop IGBT Power Module
File Size	195.43K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGT100DA60T3AG
OCR Text	20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 pins 29/30/31/32 must be shorted together pins 26/27/28/22/23/25 must be short...100a @ tc = 100c aptgt100da60t3ag aptgt100da60t3ag ? rev 0 may, 2009 www.microsemi.com 2...
Description	Boost chopper Trench Field Stop IGBT Power Module
File Size	195.85K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2MBI100HB-120-50
OCR Text	...00 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 150 a tc=80c 100 ic pulse 1ms tc=25c 300 tc=80c 200 -ic 50 -ic p...100a tj=25c - 3.30 3.60 v tj=125c - 4.20 - v ce (sat) (chip) tj=25c - 3.10 3.40 tj=125c - 4.00 - in...
Description	HIGH SPEED IGBT MODULE 1200V / 100A / 2 in one package
File Size	423.53K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKW30N6008
OCR Text	... gate-emitter voltage v ge 20 v short circuit withstand time 2 v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dis...100a 120a 140a 160a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 10...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	318.88K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP045N10A
OCR Text	... v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 164* a - continuous (t c = 100 o c, si...100a ? fast switching speed ? low gate charge ? high performance trench technology for extremel...
Description	N-Channel PowerTrench? MOSFET 100V, 164A, 4.5m
File Size	743.61K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP030N06B
OCR Text	... v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 195* a - continuous (t c = 100 o c, si...100a ? low fom r ds(on) *q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ...
Description	N-Channel PowerTrench? MOSFET 60V, 195A, 3.1m
File Size	743.33K / 9 Page	View it Online	Download Datasheet

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