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  200.0m Datasheet PDF File

For 200.0m Found Datasheets File :: 3965    Search Time::1.468ms    
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    UG3001 UG3002 UG3003 UG3004 UG3005

DIODES[Diodes Incorporated]
Part No. UG3001 UG3002 UG3003 UG3004 UG3005
OCR Text ...0 35 UG3002 100 70 UG3003 200 140 3.0 125 UG3004 400 280 UG3005 600 420 Unit V V A A 0.95 5.0 100 50 60 35 -65 to +150 ...0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 50/100 ns/cm ...
Description 3.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER

File Size 62.82K  /  2 Page

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    US1B-T1 US1B-T3 US1J-T1 US1J-T3 US1G-T3 US1G-T1 US1D-T1 US1D-T3 US1K-T1 US1K-T3 US1A US1A-T1 US1A-T3

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. US1B-T1 US1B-T3 US1J-T1 US1J-T3 US1G-T3 US1G-T1 US1D-T1 US1D-T3 US1K-T1 US1K-T3 US1A US1A-T1 US1A-T3
OCR Text ...K Unit 50 35 100 70 200 140 1.0 400 280 600 420 800 560 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Sin...0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 10ns/cm Fig. ...
Description 1.0A SURFACE MOUNT ULTRA FAST RECTIFIER 安培表面贴装超快速整
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 10V; Case Size: 6.3x11 mm; Packaging: Bulk

File Size 47.13K  /  3 Page

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    BU408 BU406H BU406 BU406TU

FAIRCHILD[Fairchild Semiconductor]
Part No. BU408 BU406H BU406 BU406TU
OCR Text ...e Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise...0m A IB = 10 mA IB = 80 IB = 60 mA 100 3 mA IB = 40 2 IB = 20mA 1 10 0 0 1 2 3 4...
Description NPN Epitaxial Silicon Transistor
High Voltage Switching

File Size 46.37K  /  5 Page

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    IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF

IRF[International Rectifier]
Part No. IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF
OCR Text ... V/C 9.0 11 m 23 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 36A VGS = 4.5V, ID = 28A VGS = 2.8V, ID = 18A VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 125C ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 131.57K  /  10 Page

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    STLC60133

STMicroelectronics
Part No. STLC60133
OCR Text ...ingle ended Test Circuit G = 6 200 VIN + +VS 0.1F 10F RL 1200 VOUT 0.1F D00TL464 10F -VS Figure 5. Differential Test Circuit G = 6 10F +VS 200 + 1200 1200 0.1F +VOUT VIN 200 RL + 0.1F -VOUT -VS 10F D00TL...
Description XDSL LINE DRIVER

File Size 90.30K  /  9 Page

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    TND017 TND017MP TND017SW

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. TND017 TND017MP TND017SW
OCR Text ...ecting temperature, Tj(sd) - V 200 Tj(sd) -- VIN Allowable Power Dissipation, PD - W 1.2 PD -- Ta TND017MP 180 1.0 160 ...0m m2 x0 .8m m) 0.5 1.8 2.0 0 Mounted on --40 --20 a ceramic board (1200mm2x...
Description CONNECTOR ACCESSORY
Lowside Power Switch Lamp, Solenoid, and Motor-Driving Applications

File Size 50.23K  /  5 Page

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    FTD1014

SANYO[Sanyo Semicon Device]
Part No. FTD1014
OCR Text ...--0.7 --0.8 --0.9 --1.0 IT00392 200 --2.0 --2.5 IT00393 Drain-to-Source Voltage, VDS -- V 200 Gate-to-Source Voltage, VGS -- V RDS...0m s tf td(on) Operation in this area is limited by RDS(on). tio n --1.0 Dra...
Description P-Channel Silicon MOSFET Load Switching Applications

File Size 28.47K  /  4 Page

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    HAT1036R

Hitachi Semiconductor
Part No. HAT1036R
OCR Text ...0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Ta = 25 C 1 shot Pulse Typical Output Chara...
Description Silicon P Channel Power MOS FET Power Switching

File Size 49.52K  /  9 Page

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    KTD1347

KEC Holdings
KEC[KEC(Korea Electronics)]
Part No. KTD1347
OCR Text ... : hFE (1) Classification A:100 200, B:140 280, C:200 400 1999. 11. 30 Revision No : 1 1/3 KTD1347 I C - VCE 5.0 COLLECOT...0m D C O pe ra tio n Ta=25 C ONE PULSE 0.3 1 3 10 30 100 C...
Description EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT) 外延平面NPN晶体管(调压器继电器驱动器灯驱动器,电气设备

File Size 86.24K  /  3 Page

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    NDT014L

FAIRCHILD[Fairchild Semiconductor]
Part No. NDT014L
OCR Text ... 10V Ciss CAPACITANCE (pF) 200 8 Coss 100 50 6 4 10 0.1 V 20 f = 1 MHz V GS = 0V Crss GS 2 0.2 ...0m VGS = 4.5V 0.1 0.05 1 4 .5"x5" FR-4 Board T A = 25 o C = 4.5V Still Air V GS ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 228.00K  /  10 Page

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