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  200s Datasheet PDF File

For 200s Found Datasheets File :: 1813    Search Time::3.218ms    
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    DF005M-DF10M DF005M DF08M DF01M DF02M DF04M DF06M DF10M

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. DF005M-DF10M DF005M DF08M DF01M DF02M DF04M DF06M DF10M
OCR Text ... 0.1 TA = 25 C Pulse Width = 200s 0.1 TA = 25 C 0.01 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 0.01 0 20 40 60 80 100 120 NORMALIZED REVERSE VOLTAGE (%) 140
Description 1.5 Ampere Bridge Rectifiers(1.5安培桥整流器)

File Size 32.17K  /  2 Page

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    DF005S-DF10S DF005S DF10S DF01S DF02S DF04S DF06S DF08S DF10

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. DF005S-DF10S DF005S DF10S DF01S DF02S DF04S DF06S DF08S DF10
OCR Text ... 0.1 TA = 25 C Pulse Width = 200s 0.1 TA = 25 C 0.01 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 0.01 0 20 40 60 80 100 120 NORMALIZED REVERSE VOLTAGE (%) 140 DF005S-DF10S, Rev. A TRADEMARKS The followin...
Description 1.5 Ampere Bridge Rectifiers(1.5安培桥整流器)

File Size 32.82K  /  3 Page

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    FMMT3905 FMMT3906

ZETEX[Zetex Semiconductors]
Part No. FMMT3905 FMMT3906
OCR Text ... pulsed conditions. Pulse width=200s. Duty cycle =1% PAGE NUMBER FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS (at Tamb=25 C unless otherwise stated) PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL FMMT3905 MIN td tr ts tf M...
Description SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

File Size 173.90K  /  2 Page

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    K1S321611C K1S321611C-FI70 K1S321611C-I

Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text ...er(Vcc min.=2.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器

File Size 178.12K  /  10 Page

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    K1S32161CC K1S32161CC-FI70 K1S32161CC-I

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text ...er(Vcc min.=2.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 184.44K  /  10 Page

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    K1S3216B1C K1S3216B1C-I

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216B1C K1S3216B1C-I
OCR Text ...er(Vcc min.=1.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Uni-Transistor Random Access Memory

File Size 179.11K  /  10 Page

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    M48T37 M48T37V M48T37V-10MH1 M48T37V-10MH1TR M48T37V-10MH6 M48T37V-10MH6TR M48T37V-70MH1 M48T37V-70MH1TR M48T37V-70MH6 M

ST Microelectronics
STMicroelectronics
Part No. M48T37 M48T37V M48T37V-10MH1 M48T37V-10MH1TR M48T37V-10MH6 M48T37V-10MH6TR M48T37V-70MH1 M48T37V-70MH1TR M48T37V-70MH6 M48T37V-70MH6TR M48T37VMH M48T37VSH M48T37Y M48T37Y-10MH1 M48T37Y-10MH1TR M48T37Y-10MH6 M48T37Y-10MH6TR M48T37Y-70MH1 M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70MH6TR M48T37YMH M48T37YSH
OCR Text ... protection not occurring until 200s after VCC passes VPFD (min). 2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. 3. tREC (min) = 20ms for Industrial Temperature Range - grade 6 device. Figure 5. Power D...
Description 3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM

File Size 127.19K  /  20 Page

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    2SK3009

ETC
Shindengen Electric Mfg.Co.Ltd
Part No. 2SK3009
OCR Text ... Drain Current ID [A] 100s 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK3009 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) ...
Description VX-2 Series Power MOSFET(600V 8A)

File Size 345.68K  /  10 Page

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    2SK3012

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK3012
OCR Text ...100s Drain Current ID [A] 200s R DS(ON) limit 1 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK3012 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(...
Description VX-2 Series Power MOSFET(600V 12A)

File Size 417.87K  /  12 Page

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    2SK3013

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK3013
OCR Text ...fe Operating Area 16 10 100s 200s Drain Current ID [A] R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK3013 Transient Thermal Impedance 10 1 T...
Description VX-2 Series Power MOSFET(600V 16A)

File Size 419.38K  /  12 Page

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