25 15-g pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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25 15-g Datasheet PDF File

For 25 15-g Found Datasheets File :: 223944 Search Time::12.609ms
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				DIODES[Diodes Incorporated] Diodes Inc.
Part No.	BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text	... 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 TOP VIEW BC C D F H M Mechanical Data * * * * * * * Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classific...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Low-Cost, Precision, High-Side Current-Sense Amplifier
File Size	45.33K / 2 Page	View it Online	Download Datasheet

				Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
Part No.	BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text	...0 1.80 2.20 -- 0.10 0.90 1.10 0.25 -- 0.05 0.15 Mechanical Data ! ! ! ! ! Case: SOT-323, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approx.) Mounting P...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
File Size	36.12K / 3 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...A; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16...15 2.5 70 500 +150 175 V V V mA mW C C UNIT handbook, halfpage 600 MBG248 P tot (mW) 400...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...e 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 9...15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW Philips Semiconductors ...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	... Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbo...15 7.3 53.3 800 25 30 5.7 26.7 800 25 - - - - - V A W ms Short-circuit protection ISC = ...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BUH1215 4496
OCR Text	...5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 16 22 9 12 200 -65 to ...15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.16...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
File Size	73.01K / 7 Page	View it Online	Download Datasheet

				Power Innovations Ltd Power Innovations Limited
Part No.	BUPD1520
OCR Text	... 2 and 3) 10 10 10 7 0.3 0.7 21 25 25 18 (see Notes 2 and 3) TEST CONDITIONS MIN 700 1500 11 100 100 1 1.0 1.1 1.2 1.2 3.0 V V TYP MAX UNIT ...15,32 14,55 1,32 1,23 18,0 TYP. 6,1 5,6 0,97 0,66 1 2 3 1,47 1,07 14,1 12,7 2,7...
Description	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
File Size	114.07K / 5 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	BUX48A BUV48A BUV48AFI BUX48
OCR Text	...rent Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 850 850 400 TO-3 175 -65 to200 200 J...15 A IB = 4 A I C = 15 A IB = 3 A for BUX48A/V48A/V48AFI IC = 8 A I B = 1.6 A I C = 12 A I B = 2.4 A...
Description	HIGH POWER NPN SILICON TRANSISTORS RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated HIGH POWER NPN SILICON TRANSISTORS
File Size	88.73K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BUX48C BUV48C BUV48CFI
OCR Text	...TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
File Size	47.06K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	... current 20 A 72 50 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 C TC = 80 C Power dissipa...15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C Zero gate voltage collector current ...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

For 25 15-g Found Datasheets File :: 223944 Search Time::12.609ms
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