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  25 15-g Datasheet PDF File

For 25 15-g Found Datasheets File :: 223944    Search Time::12.609ms    
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    BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text ... 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 TOP VIEW BC C D F H M Mechanical Data * * * * * * * Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classific...
Description    SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Low-Cost, Precision, High-Side Current-Sense Amplifier

File Size 45.33K  /  2 Page

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    BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text ...0 1.80 2.20 -- 0.10 0.90 1.10 0.25 -- 0.05 0.15 Mechanical Data ! ! ! ! ! Case: SOT-323, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approx.) Mounting P...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 36.12K  /  3 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...A; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16...15 2.5 70 500 +150 175 V V V mA mW C C UNIT handbook, halfpage 600 MBG248 P tot (mW) 400...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...e 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 9...15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW Philips Semiconductors ...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ... Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbo...15 7.3 53.3 800 25 30 5.7 26.7 800 25 - - - - - V A W ms Short-circuit protection ISC = ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ...5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 16 22 9 12 200 -65 to ...15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.16...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 73.01K  /  7 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 2 and 3) 10 10 10 7 0.3 0.7 21 25 25 18 (see Notes 2 and 3) TEST CONDITIONS MIN 700 1500 11 100 100 1 1.0 1.1 1.2 1.2 3.0 V V TYP MAX UNIT ...15,32 14,55 1,32 1,23 18,0 TYP. 6,1 5,6 0,97 0,66 1 2 3 1,47 1,07 14,1 12,7 2,7...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    BUX48A BUV48A BUV48AFI BUX48

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. BUX48A BUV48A BUV48AFI BUX48
OCR Text ...rent Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 850 850 400 TO-3 175 -65 to200 200 J...15 A IB = 4 A I C = 15 A IB = 3 A for BUX48A/V48A/V48AFI IC = 8 A I B = 1.6 A I C = 12 A I B = 2.4 A...
Description    HIGH POWER NPN SILICON TRANSISTORS
RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated
HIGH POWER NPN SILICON TRANSISTORS

File Size 88.73K  /  7 Page

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    BUX48C BUV48C BUV48CFI

STMICROELECTRONICS[STMicroelectronics]
Part No. BUX48C BUV48C BUV48CFI
OCR Text ...TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -...
Description    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

File Size 47.06K  /  6 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ... current 20 A 72 50 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 C TC = 80 C Power dissipa...15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C Zero gate voltage collector current ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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