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Samsung Semiconductor Co., Ltd.
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Part No. |
2SC1757D 2SC1756C 2SC1756E
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Description |
TRANSISTOR | BJT | NPN | 300v V(BR)CEO | 700MA I(C) | TO-220AB TRANSISTOR | BJT | NPN | 300v V(BR)CEO | 700MA I(C) | TO-220 晶体管|晶体管|叩| 300v五(巴西)总裁| 700mA的一(c)|20
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File Size |
647.12K /
8 Page |
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Linear Technology, Corp.
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Part No. |
LT3485EDD-2TRPBF LT3485-0-15
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Description |
Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated igbt Drive; Package: DFN; no of pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
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File Size |
320.27K /
20 Page |
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it Online |
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![C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y](Maker_logo/continental_device_india_limited.GIF)
continental Device India Limited
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Part No. |
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y
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Description |
10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300v Vceo, 0.200A Ic, 100 - 200 hFE.
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File Size |
136.14K /
2 Page |
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IXYS[IXYS Corporation] IXYS, Corp.
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Part No. |
IXSH24N60A IXSH24N60
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Description |
igbt Discretes: Low Saturation Voltage Types HiPerFAST igbt(VCES00V,VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管) HiPerFAST igbt(VCES00V,VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL igbt, TO-247AD
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File Size |
34.65K /
2 Page |
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it Online |
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Price and Availability
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