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  32m x 16 ddr dram 0 4 ns pbga8 Datasheet PDF File

For 32m x 16 ddr dram 0 4 ns pbga8 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

   
Part No. UPD452560000'>163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45256441G5-A80L-9JF UPD45256841G5-A10B-9JF
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PDSO54
64M 0000'>x 4 SYNCHRONOUS 0000'>dram, 6 ns, PDSO54
0000'>32m 0000'>x 8 SYNCHRONOUS 0000'>dram, 7 ns, PDSO54

File Size 650.31K  /  84 Page

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    HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HYB3164405AT-40 HYB3165405AT-40 HYB3165405AJ-60 HYB3165405AJ-50

SIEMEns AG
Infineon Technologies AG
Part No. HYB30000'>165405AJ-40 HYB30000'>164405AJ-40 HYB30000'>164405AT-50 HYB30000'>164405AT-40 HYB30000'>165405AT-40 HYB30000'>165405AJ-60 HYB30000'>165405AJ-50
Description High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
0000'>16M 0000'>x 4 EDO 0000'>dram, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
0000'>16M 0000'>x 4 EDO 0000'>dram, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
0000'>16M 0000'>x 4-Bit Dynamic RAM 0000'>16M 0000'>x 4 EDO 0000'>dram, 60 ns, PDSO32
0000'>16M 0000'>x 4-Bit Dynamic RAM 0000'>16M 0000'>x 4 EDO 0000'>dram, 50 ns, PDSO32

File Size 334.00K  /  29 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4S51323PF-MEF90 K4S51323PF-MEF75 K4S51323P K4S51323PF-MEF1L K4S51323PF-MF750JR K4S51323PF-EF750 K4S51323PF-MF1L0 K4S51323PF-EF900
Description 0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 7 ns, PBGA90 LEAD FREE, FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 7 ns, PBGA90 FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 6 ns, PBGA90 LEAD FREE, FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 6 ns, PBGA90 FBGA-90
4M 0000'>x 32Bit 0000'>x 4 Banks Mobile-S0000'>dram
From old datasheet system

File Size 139.48K  /  12 Page

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    Infineon
SIEMEns[Siemens Semiconductor Group]
Part No. HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HYB5117800-50 HYB3117800BSJ-50 Q67100-Q1093 HB17800C HYB3117800BSJ-60 HYB5117800BSJ-50- Q67100-Q1092
Description 2M 0000'>x 8 Bit 2k 5 V 60 ns FPM 0000'>dram
2M 0000'>x 8 Bit 2k 3.3 V 60 ns FPM 0000'>dram
2M 0000'>x 8 Bit 2k 3.3 V 50 ns FPM 0000'>dram
2M 0000'>x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M 0000'>x 8-Bit Dynamic RAM
From old datasheet system

File Size 176.79K  /  23 Page

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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560000'>163PF K4S560000'>163PF-F1L K4S560000'>163PF-F90 K4S560000'>163PF-RG K4S560000'>163PF-RG_F90 K4S560000'>163PF-RG_F1L K4S560000'>163PF-RG_F75 K4S560000'>163PF-RG/F90 K4S560000'>163PF-RG/F1L K4S560000'>163PF-RG/F75 K4S560000'>163PF-RF750 K4S560000'>163PF-BF900 K4S560000'>163PF-RG750 K4S560000'>163PF-BG750 K4S560000'>163PF-RF900
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PBGA54 LEAD FREE, FBGA-54
0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 7 ns, PBGA54 LEAD FREE, FBGA-54
0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PBGA54 FBGA-54
4M 0000'>x 0000'>16Bit 0000'>x 4 Banks Mobile S0000'>dram in 54FBGA 40000'>16 × 4银行4FBGA移动S0000'>dram
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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    Micron Technology, Inc.
Part No. MT46V0000'>32m0000'>16P-5BC MT46V0000'>32m0000'>16BN-6C
Description 0000'>32m 0000'>x 0000'>16 0000'>ddr 0000'>dram, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
0000'>32m 0000'>x 0000'>16 0000'>ddr 0000'>dram, 0.7 ns, PBGA60

File Size 4,119.26K  /  94 Page

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    Siemens Semiconductor G...
Infineon
SIEMEns[Siemens Semiconductor Group]
SIEMEns AG
Part No. HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HYM64V2005GU-50 Q67100-Q2183 Q67100-Q2180 Q67100-Q2181 Q67100-Q2182
Description    3.3V 2M 0000'>x 64-Bit EDO-0000'>dram Module 3.3V 2M 0000'>x 72-Bit EDO-0000'>dram Module
2M 0000'>x 72 Bit ECC 0000'>dram Module unbuffered
2M 0000'>x 64 Bit 0000'>dram Module unbuffered
3.3V 2M 0000'>x 64-Bit EDO-0000'>dram Module 3.3V 2M 0000'>x 72-Bit EDO-0000'>dram Module 2M 0000'>x 72 EDO 0000'>dram MODULE, 60 ns, DMA0000'>168

File Size 78.73K  /  14 Page

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    KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM40000'>16S4030C KM40000'>16S4030CT-F10 KM40000'>16S4030CT-F7 KM40000'>16S4030CT-F8 KM40000'>16S4030CT-FH KM40000'>16S4030CT-FL KM40000'>16S4030CT-G KM40000'>16S4030CT-G8
Description 64Mbit (1M 0000'>x 0000'>16bit 0000'>x 4 banks) bynchronous 0000'>dram LVTTL, 125MHz
1M 0000'>x 0000'>16Bit 0000'>x 4 Banks Synchronous 0000'>dram 1000000'>16 × 4银行同步0000'>dram

File Size 124.02K  /  11 Page

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    Micron Technology, Inc.
Part No. MT48LC4M0000'>16A2P-75 MT48LC4M0000'>16A2P-75LIT MT48LC0000'>16M4A2P-75L
Description 4M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
0000'>16M 0000'>x 4 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54

File Size 1,450.18K  /  55 Page

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    Hyni0000'>x Semiconductor, Inc.
N0000'>xP Semiconductors N.V.
Part No. HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834ATZG-60 HYM5V64834ATZG-50 HYM5V64804ASLTZG-50 HYM5V64804ATZG-50
Description 8M 0000'>x 64 EDO 0000'>dram MODULE, 50 ns, DMA144 SODIMM-144
0000'>x64 EDO Page Mode 0000'>dram Module 0000'>x64的EDO公司页面模式内存模块

File Size 202.72K  /  11 Page

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For 32m x 16 ddr dram 0 4 ns pbga8 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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