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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
M366S1724CT0-C1L M366S1724CT0-C1H
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| OCR Text |
...
SERIAL PRESENCE DETECT
Byte # 35 36~61 62 63 64 65~71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95~98 99~125 12...50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h
22 23 24 25 26 27 28 29 30 31 3... |
| Description |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
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| File Size |
54.11K /
7 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M
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| OCR Text |
... low to status output t rsto - 35 ce low to status output t csto - 45 re access time(read id) t readid - 35 parameter symbol min max unit...50ns) is added. 1. copy-back program(dummy) is added in command sets table. ... |
| Description |
64M x 8 Bit NAND Flash Memory
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| File Size |
1,148.09K /
41 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
23L3211-90 23L3211-10
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| OCR Text |
...1 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 nc a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce/ce vss oe/oe d0 d8 d1 d9 d2 d10...50ns output enable time toe - 25ns - 25ns - 30ns - 50ns output hold after address toh 0ns - 0ns - 0n... |
| Description |
32M-BIT MASK ROM (8/16-BIT OUTPUT) 32兆位掩码光盘6位产品输出）
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| File Size |
487.21K /
10 Page |
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it Online |
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Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
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| OCR Text |
...IO8 NC VSS /LCAS
37 /UCAS 36 35 /OE NC
34 NC 33 32 31 30 29 28 27 26 NC A11 A10 A9 A8 A7 A6 VSS
50 Pin Plastic SOJ / TSOP-II
PIN...50ns 60ns
mA
1, 2
ICC2
Standby current (TTL interface) Power supply standby current (/RA... |
| Description |
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
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| File Size |
95.00K /
11 Page |
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it Online |
Download Datasheet |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
...9 20 21
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS U...50ns ICC1
Parameter
Min
2.4
Max
Vcc
Unit
V
Note
VOL
0 -
0.4 190 170 150
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| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
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it Online |
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Samsung
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| Part No. |
K9F2808U0C
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| OCR Text |
...6 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
X8
N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C ...50ns, CE=VIL IOUT=0mA CE=VIH, WP=0V/VCC CE=VCC-0.2, WP=0V/VCC VIN=0 to Vcc(max) VOUT=0 to Vcc(max) I... |
| Description |
IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
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| File Size |
317.17K /
32 Page |
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it Online |
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Price and Availability
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