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  400v 0.10a 35 Datasheet PDF File

For 400v 0.10a 35 Found Datasheets File :: 1143    Search Time::1.812ms    
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    IRFMA450 IRFMA540

IRF[International Rectifier]
Part No. IRFMA450 IRFMA540
OCR Text ...50A VDS > 15V, IDS = 8.0A VDS= 400v ,VGS=0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 12A VDS = 250V VDD = 250V, ...0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = 25V f = 1.0...
Description 500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET THRU-HOLE (Tabless TO-254AA)

File Size 162.52K  /  7 Page

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    IRFP31N50L

International Rectifier, Corp.
Part No. IRFP31N50L
OCR Text ..., VGS = 0V --- --- 2.0 mA VDS = 400v, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Par...
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.15ohm,身份证\u003d 31A条)
HEXFET? Power MOSFET

File Size 93.16K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7408 FN4637
OCR Text ... Drain Current IDSS VDS = 400v, VGS = 0V VGS = 20V TC = 25oC TC = 125oC TC = 25oC TC = 125oC Gate to Source Leakage Current I...0, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0, VDS = 400v VGS = 12V, ID = 9A VGS = 12V...
Description Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs

File Size 54.83K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKB10N60A SKP10N60A SKW10N60A
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 120W 25A 100W 20A Ptot, POWER DISSIPATION 80W IC, COLLECTOR CURRENT ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode

File Size 442.88K  /  15 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW14N60ED_D ON1920 MGW14N60ED ON1919
OCR Text ...bility - 10 ms minimum at 125C, 400v * Low On-Voltage -- 2.0V typical at 10A, 125C * Soft Recovery Free Wheeling Diode is included in the Pa...0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C Collector Current...
Description IGBT IN TO-47 14 A @ 90 18 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 145.38K  /  6 Page

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    STMicro
Part No. STTA2006PI STTA2006P 3170
OCR Text ... =-50A/s VR =30V Tj = 125C VR = 400v dIF/dt = -160 A/s dIF/dt = -500 A/s Tj = 125C VR = 400v dIF/dt = -500 A/s IF =20A 12.5 17.5 IF =20A 0.42 / Min Typ 30 60 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forwar...
Description TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system

File Size 70.46K  /  8 Page

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    STTA2006 STTA2006P STTA2006PI

ST Microelectronics
STMicroelectronics
Part No. STTA2006 STTA2006P STTA2006PI
OCR Text ... =-50A/s VR =30V Tj = 125C VR = 400v dIF/dt = -160 A/s dIF/dt = -500 A/s Tj = 125C VR = 400v dIF/dt = -500 A/s IF =20A 12.5 17.5 IF =20A 0.42 / Min Typ 30 60 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol tfr Parameter Forward...
Description TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE

File Size 257.36K  /  8 Page

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    IGB15N60T

INFINEON[Infineon Technologies AG]
Part No. IGB15N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) Allowed number of short circuits: <1000; time b...
Description Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...

File Size 361.51K  /  12 Page

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    IKB15N60T

INFINEON[Infineon Technologies AG]
Part No. IKB15N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) Allowed number of short circuits: <1000; time b...
Description 600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 394.61K  /  13 Page

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    IR2110E4

IRF[International Rectifier]
Part No. IR2110E4
OCR Text ...operation Fully operational to +400v Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervol...0.5 VS + 20 -- 400 VS -0.5 VB + 0.5 -0.5 20 -0.5 VCC + 0.5 -0.5 VSS + 20 VCC - 20 VCC + 0.5 VSS - 0....
Description HIGH AND LOW SIDE DRIVER

File Size 123.57K  /  14 Page

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For 400v 0.10a 35 Found Datasheets File :: 1143    Search Time::1.812ms    
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