...j Tstg
1
2SB566(K) -70 -50 -5 -4 -8 40 150 -55 to +150
2SB566A(K) -70 -60 -5 -4 -8 40 150 -55 to +150
Unit V V V A A W C C
2SB566(K), 2SB566A(K)
Electrical Characteristics (Ta = 25C)
2SB566(K) Item Collector to base breakdown...
...ementary to 2SD592 and 2SD592A
5.00.2
Unit: mm
4.00.2
q q
Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25C)
Ratings -30 -60 -25 -50 -5 -1.5 -1 750 150 -55 ~ +150 Unit V
s Absolute Ma...
...2SB631K, D600K (-)120 (-)120 (-)5 (-)1 (-)2 1
Unit V V V A A W W
Tc=25C
Tj Tstg
8 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltag...
Description
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
... 3.50.1
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.00.1
R
0.
...
... to 2SD638 and 2SD639
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.00.1
0.85
Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643
Symbol VCBO VCEO VEBO ICP IC ...
Description
Silicon PNP epitaxial planer type(For low-power general amplification)
...ak) PC Tj Tstg 2SB647 -120 -80 -5 -1 -2 0.9 150 -55 to +150 2SB647A -120 -100 -5 -1 -2 0.9 150 -55 to +150 Unit V V V A A W C C
Electrical Characteristics (Ta = 25C)
2SB647 Item Collector to base breakdown voltage Collector to emitter b...
...Tj Tstg
1
2SB649 -180 -120 -5 -1.5 -3 1 20 150 -55 to +150
2SB649A -180 -160 -5 -1.5 -3 1 20 150 -55 to +150
Unit V V V A A W W C C
2
2SB649, 2SB649A
Electrical Characteristics (Ta = 25C)
2SB649 Item Collector to base brea...
...res
q q
0.650.15
+0.25 1.5 -0.05
0.650.15
0.95
1.1 -0.1
+0.2
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction ...
...ol VCBO Rating -30 -60 -25 -50 -5 - 0.5 -1 200 150 -55 to +150 V A A mW C C V Unit V
10
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
1.1+0.2 -0.1
Collector-emitter voltage 2SB0710 (Base open) 2SB0710A
1.1+0.3 -0.1
Emitter-base volta...