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    DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50
OCR Text ...trobe and DLL FEATURES * 2.5V 5% power supply * SSTL_2 compatible inputs/outputs * 4 banks operation * MRS cycle with address key programs...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe Programming Register LCKE LRAS LCBR...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

File Size 236.21K  /  18 Page

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    K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50
OCR Text ... tCK(max) is 4ns. Revision 1.5 (December 14, 2001) * Removed K4D26323RA-GC2A/33/36(VDD/VDDQ=2.8V) & K4D263238A-GC55/60 from the spec. * ...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe (DQS0~DQS3) Programming Register L...
Description DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL

File Size 295.84K  /  17 Page

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    K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45
OCR Text ...fferential clocks Revision 1.5 (August 11, 2003) * Typo corrected Revision 1.4 (April 30, 2003) * Added Lead free package part numbe...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe (DQS0~DQS3) Programming Register L...
Description 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL

File Size 308.67K  /  17 Page

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    K4D263238F K4D263238F-QC40 K4D263238F-QC50

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
Part No. K4D263238F K4D263238F-QC40 K4D263238F-QC50
OCR Text ...trobe and DLL FEATURES * 2.5V 5% power supply for device operation * 2.5V 5% power supply for I/O interface * SSTL_2 compatible inputs/ou...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe Programming Register LCKE LRAS LCBR...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system

File Size 235.10K  /  17 Page

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    K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36

Samsung semiconductor
Part No. K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36
OCR Text ...trobe and DLL FEATURES * 2.5V 5% power supply for device operation * 2.5V 5% power supply for I/O interface * SSTL_2 compatible inputs/ou...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe (DQS0~DQS3) Programming Register L...
Description 128Mbit GDDR SDRAM

File Size 322.51K  /  17 Page

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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text ...ary one. Revision 1.1 (March 5, 2000) * Added K4D263238M-QC40 with VDD&VDDQ=2.8V * Changed VDD/VDDQ of K4D263238M-QC45 from 2.5V to 2.8V...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe Programming Register LCKE LRAS LCBR...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 280.12K  /  19 Page

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    K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text ... tCK(max) is 4ns. Revision 1.5 (December 10, 2001) * Removed K4D263238A-GC33/40/45/50/55/60(VDD/VDDQ=2.5V) from the spec Revision 1.4...Col. Buffer Latency & Burst Length Strobe Gen. Data Strobe (DQS0~DQS3) Programming Register L...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 300.83K  /  18 Page

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    KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10

ETC[ETC]
Samsung semiconductor
Part No. KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text ...KM416S1120D-7 @ CL3 from 6ns to 5.5ns * Changed tOH of KM416S1120D-8/10 from 3ns to 2.5ns * Add KM416S1120D-Z (125MHz @ CL2) * Changed ICC1 ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,126.95K  /  43 Page

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    KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text ... A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40...col. address Delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM

File Size 124.02K  /  11 Page

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