5.08 10 270 pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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5.08 10 270 Datasheet PDF File

For 5.08 10 270 Found Datasheets File :: 8771 Search Time::1.562ms
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				MOTOROLA[Motorola, Inc] Tyco Electronics
Part No.	MRF1035MB MRF1035
OCR Text	...tion to Case (2) Symbol RJC Max 5.0 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ...08 0.17 15.24 --- K 1 3 D 2 H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. ...
Description	MICROWAVE POWER TRANSISTORS
File Size	99.06K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF1090MA MRF1090MX MRF1090MB
OCR Text	...er-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 ...08 0.18 15.24 --- 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 INCHES MIN MAX 0.270 0.300 0.240 0.260 0....
Description	MICROWAVE POWER TRANSISTORS
File Size	102.92K / 6 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF1090MB MRF1090MX
OCR Text	...er-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 ...08 0.17 15.24 --- K D H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. CASE 332A...
Description	MICROWAVE POWER TRANSISTOR NPN SILICON
File Size	118.00K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1150MA MRF1150MB
OCR Text	...er-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 ...08 0.18 15.24 --- 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 BASE EMITTER BASE COLLECTOR INCHES MIN MA...
Description	MICROWAVE POWER TRANSISTORS
File Size	126.52K / 5 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF1150MB
OCR Text	...er-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 ...08 0.17 15.24 --- K D H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. CASE 332A...
Description	MICROWAVE POWER TRANSISTOR NPN SILICON
File Size	143.71K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF158
OCR Text	... TJ Symbol RJC Value 65 65 40 0.5 8.0 45 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/C C C THERMAL CHARACTERISTICS Characteristic The...08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 --- 45 _REF F J A C STYL...
Description	TMOS BROADBAND RF POWER FET
File Size	94.07K / 6 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF166W
OCR Text	... with 30:1 VSWR * Low Crss -- 4.5 pF @ VDS = 28 Volts * Circuit board photomaster available upon request by contacting RF Tactical Marketing...08 0.15 15.88 17.14 12.58 13.20 3.05 3.55 18.42 BSC 1 2 K 3 4 5 -B- D 4 PL 0.51 (0.0...
Description	TMOS BROADBAND RF POWER FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	134.64K / 6 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF275 MRF275L
OCR Text	...DSS IGSS 65 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reas...08 - j1.5 1.0 - j0.5 VDD = 28 V, IDQ = 100 mA, Pout = 100 W f ZOL* (MHz) Ohms 225 400 500 1.6 - j...
Description	N-CHANNEL BROADBAND RF POWER FET
File Size	265.53K / 13 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB] SEMELAB
Part No.	SML40H22
OCR Text	... 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 - Drain Pin 2 - Source Pin 3 - Gate * Faster Switching * Lower Leakage * TO-258 Hermetic Package D G S StarMOS is a new generation of...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	26.06K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	SML40H28 SML40H28R1
OCR Text	... 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 - Drain Pin 2 - Source Pin 3 - Gate * Faster Switching * Lower Leakage * TO-258 Hermetic Package D G S StarMOS is a new generation of...
Description	28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	19.55K / 2 Page	View it Online	Download Datasheet

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