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5.08 12 270 Datasheet PDF File

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				MOTOROLA[Motorola, Inc]
Part No.	MRF158
OCR Text	... TJ Symbol RJC Value 65 65 40 0.5 8.0 45 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/C C C THERMAL CHARACTERISTICS Characteristic The...08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 --- 45 _REF F J A C STYL...
Description	TMOS BROADBAND RF POWER FET
File Size	94.07K / 6 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF166W
OCR Text	... with 30:1 VSWR * Low Crss -- 4.5 pF @ VDS = 28 Volts * Circuit board photomaster available upon request by contacting RF Tactical Marketing...08 0.15 15.88 17.14 12.58 13.20 3.05 3.55 18.42 BSC 1 2 K 3 4 5 -B- D 4 PL 0.51 (0.0...
Description	TMOS BROADBAND RF POWER FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	134.64K / 6 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF275 MRF275L
OCR Text	...DSS IGSS 65 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reas...08 - j1.5 1.0 - j0.5 VDD = 28 V, IDQ = 100 mA, Pout = 100 W f ZOL* (MHz) Ohms 225 400 500 1.6 - j...
Description	N-CHANNEL BROADBAND RF POWER FET
File Size	265.53K / 13 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB] SEMELAB
Part No.	SML40H22
OCR Text	... 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 - Drain Pin 2 - Source Pin 3 - Gate * Faster Switching * Lower Leakage * TO-258 Hermetic Package D G S StarMOS is a new generation of...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	26.06K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	SML40H28 SML40H28R1
OCR Text	... 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 - Drain Pin 2 - Source Pin 3 - Gate * Faster Switching * Lower Leakage * TO-258 Hermetic Package D G S StarMOS is a new generation of...
Description	28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	19.55K / 2 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] VishaySiliconix Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
Part No.	200D318X0006A1 202D318X0006A1 202D318X9006A1 200D 200D318X9006A1
OCR Text	...031 [0.79] C L 0.203 0.031 [5.16 0.79] C L 1.275 0.015 [32.39 0.38] H 0.062 [1.57] 1.593 0.062 [40.46 1.57] MODEL 200D ww...08 1.27 0.99 1.28 1.68 1.93 1.22 1.50 1.81 1.97 2.25 2.43 2.98 3.45 3.92 4.40 4.88 0.99 1.28 1.14 1....
Description	Wet Tantalum Capacitors Wet Sintered Anode TANTALEX TANTAPAK Capacitor Assemblies WetTantalumCapacitorsWetSinteredAnodeTANTALEXTANTAPAKCapacitorAssemblies DB25 RJ45,8 WIRE,FEMALEMODUL DB25 RJ45,8 WIRE,MALE MODULA DB25 RJ45,8 WIRE,FEMALEMODUL 液体钽电容器烧结湿电容器阳极TANTALEX TANTAPAK大会
File Size	573.14K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BUZ104S Q67040-S4007-A2
OCR Text	... S Type VDS 55 V ID 13.5 A RDS(on) 0.1 Package Ordering Code BUZ 104 S TO-220 AB Q67040-S4007-A2 Maximum Rati...08 k 0.04 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 i h j k 8.0 9.0 10.0 20.0 ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
File Size	126.55K / 8 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	BZW03C240 BZW03C30 BZW03C24 BZW03C91 BZW03C BZW03C12 BZW03C100 BZW03C110 BZW03C13 BZW03C180 BZW03C33 BZW03C36 BZW03C39 BZW03C9V1 BZW03C10 BZW03C11 BZW03C120 BZW03C130 BZW03C15 BZW03C150 BZW03C16 BZW03C160 BZW03C18 BZW03C20 BZW03C200 BZW03C22 BZW03C220 BZW03C27 BZW03C270 BZW03C43 BZW03C47 BZW03C51 BZW03C56 BZW03C62 BZW03C68 BZW03C75 BZW03C7V5 BZW03C82 BZW03C8V2
OCR Text	...de * FaxBack +1-408-970-5600 1 (5) BZW03C... Vishay Telefunken Type BZW03C... 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 ...08 0.03 0.08 0.05 0.09 0.05 0.10 0.05 0.10 0.05 0.10 0.05 0.10 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0....
Description	3V Supervisor Silicon Z-Diode and Transient Voltage Suppressor(硅齐纳二极管和瞬变电压抑制器) Silicon Z-Diodes and Transient Voltage Suppressors From old datasheet system
File Size	62.85K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	CGY2013G CGY2013GC1
OCR Text	...PA) overall efficiency 52% * 35.5 dB gain * 0 dBm input power * Gain control range >55 dB * Low output noise floor of PA < -130 dBm/Hz in GS...08-01 1998 Jan 23 8 Philips Semiconductors Preliminary specification GSM 4 W power am...
Description	GSM 4 W power amplifier
File Size	86.11K / 12 Page	View it Online	Download Datasheet

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