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  5.9ghz Datasheet PDF File

For 5.9ghz Found Datasheets File :: 808    Search Time::1.281ms    
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    Sanyo
Part No. 2SC4407
OCR Text ...V, f=1MHz VCB=10V, f=1MHz 40* 1.5 3.0 0.7 0.45 1.0 Conditions Ratings min typ max 0.1 10 200* GHz pF pF Unit A A * : The 2SC4407 is class...9GHz VCE=10V, IC=3mA, f=0.9GHz See specified Test Circuit. Ratings min typ 12 3.0 max Unit dB dB ...
Description NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications

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    CXG7001FN

SONY[Sony Corporation]
Part No. CXG7001FN
OCR Text ... Low current consumption: IDD = 5.5mA Typ. (When no signal) * High conversion gain: Gc = 20.5dB Typ. (f = 1.9GHz) * Low distortion: Input IP3 = -13dBm Typ. (f = 1.9GHz) * High image suppression ratio: IMR = 40dBc Typ. (f = 1.9GHz) * High 1/...
Description Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS

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    SIEMENS AG
Part No. BFR182
OCR Text ...10 v, f = 1 mhz c cb - 0.33 0.5 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.2 - emitter-base capacitance v eb ...9ghz v ce = parameter 0 5 10 15 ma 25 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0.7v po...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    Sanyo
Part No. 2SC4404
OCR Text ...s * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=2.2dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4404applied sets to be made smaller and slimmer. 1.250 2.1 ...
Description NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 875 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) ...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

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    SIEMENS AG
Part No. BFR182W
OCR Text ...er-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.6 - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f...9ghz v ce = parameter 0 4 8 12 16 20 ma 26 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0....
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
Part No. MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text ...perates from a single +2.7V to +5.25V* power supply and is specified over the extended -40C to +85C temperature range. The MAX2016 is availa...9GHz RF Input Power Range 3dB Dynamic Range Range Center Temperature Sensitivity Slope Typical Slope...
Description 2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) ...9GHz VCE = Parameter 18 dB 16 10V 3V 2V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    Sanyo
Part No. 2SA1669 0112
OCR Text ...GHz VCE=-10V, IC=-3mA, f=0.9GHz 5.0 11 2.0 15 1.5 3.0 1.0 0.7 1.5 GHz pF pF dB dB dB Conditions Ratings min typ max -0.1 -0.1 Unit A A Note) Marking : DB Any and all SANYO products described or contained herein do not have specificati...
Description PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ... 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collec...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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For 5.9ghz Found Datasheets File :: 808    Search Time::1.281ms    
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