N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown voltage, V(br)gss:-50V; Zero Gate voltage Drain current Min, Idss:0.5mA; Zero Gate voltage Drain current Max, Idss:12mA; Gate-source Cutoff voltage Max, Vgs(off):-1.5V
high voltage IGBT S Series - Improved SCSOA Capability IGBT Discretes: Low Saturation voltage Types high voltage IGBT(VCES200V,VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD 1200V high voltage IGBT