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Integrated Device Techn...
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| Part No. |
5PB1206NDGK
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| OCR Text |
...rature (extended) -40 to +105 ? c storage temperature -65 to +150 ? c junction temperature 125 ? c soldering temperature 260 ? c oe1 oe2 oe3...mos clock buffer family 4 july 11, 2016 5pb12xx datasheet dc electrical characteristics (vdd = 1.8v... |
| Description |
3-Channel High-Performance TCXO/LVCMOS Clock Buffer Family
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| File Size |
304.05K /
15 Page |
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it Online |
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AIMTRON[Aimtron Technology]
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| Part No. |
AT1731AP-GRE AT1731A AT1731AP
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| OCR Text |
...l Park, Hsinchu 300,Taiwan, R.O.C. Tel: 886-3-563-0878 Fax: 886-3-563-0879 WWW: http://www.aimtron.com.tw 2/8/2006 REV:1.1 Email: service@ai...MOS Drain. Place output diode and inductor. Input voltage pin of the device .Vin may range from 2.6V... |
| Description |
DC-DC Power IC for TFT Panel
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| File Size |
452.91K /
22 Page |
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it Online |
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Electronic Theatre Controls, Inc.
ETC[ETC]
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| Part No. |
M2000C
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| OCR Text |
...100 -45 Max 7 100 125 Unit V mA C Remarks One pin at a time
Table 1: Electrical Characteristics (Stresses beyond those listed above may c...mos.co.za
Page 2 of 5
Rev. 1.0
MOS
(PTY) LTD.
Microsystems On Silicon Member of ELMOS... |
| Description |
PIR Light Controller for 3-Wire Applications
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| File Size |
199.29K /
5 Page |
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it Online |
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Shindengen Electric Mfg...
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Shindengen Electric Manufacturing Co., Ltd.
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| Part No. |
MD1332F
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| OCR Text |
...CL+: 3 GND: 4 Vcc: 5 Vboot: 6 N/C: 7
28: amp27: ampOUT 26: Vref: 25: VTS 24: GND 23: VB 22: VG
Symbol S/S OCLOCL+ GND Vcc Vboot N/C P....MOS Non-connection Power GND Non-connection Gate terminal of main MOS Bootstrap capacitor between VB... |
| Description |
High-Efficiency Step Down DC-DC Converter Power Integrated Circuit 高效率下降的DC升压DC转换器电源集成电
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| File Size |
28.66K /
2 Page |
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it Online |
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MACOM[Tyco Electronics]
MA-Com
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| Part No. |
MRF150
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| OCR Text |
...00 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasona... |
| Description |
N-CHANNEL MOS LINEAR RF POWER FET
150 W, N-channel MOS linear RF power FET
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| File Size |
181.58K /
8 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF157
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| OCR Text |
...00 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.13 Unit C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reason... |
| Description |
MOS LINEAR RF POWER FET
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| File Size |
187.23K /
7 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF174
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| OCR Text |
...00 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.65 Unit C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge.... |
| Description |
N-CHANNEL MOS BROADBAND RF POWER FET
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| File Size |
175.58K /
9 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF275G MRF275
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| OCR Text |
...00 Unit Vdc Vdc Adc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Max 0.44 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be ... |
| Description |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
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| File Size |
260.01K /
16 Page |
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it Online |
Download Datasheet |
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Price and Availability
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