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For commutating Found Datasheets File :: 2416    Search Time::4.922ms    
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    NXP Semiconductors N.V.
Part No. ACTT6X-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

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    NXP Semiconductors N.V.
Part No. ACTT6G-800E
OCR Text .../s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; ...
Description AC Thyristor Triac power switch

File Size 846.78K  /  14 Page

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    NXP Semiconductors N.V.
Part No. ACTT6B-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

File Size 143.64K  /  14 Page

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    NXP Semiconductors N.V.
Part No. ACTT6-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

File Size 148.14K  /  14 Page

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    NXP Semiconductors N.V.
Part No. ACTT2X-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =2a; dv com /dt = 10 v/s; gate open circuit; see figure 14 ; see figure 15 3--a/ms v cl clamping voltage i cl = 0.1 ma; t p =1ms; t j = 25 c 850 - - v ...
Description AC Thyristor Triac power switch

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    NXP Semiconductors N.V.
Part No. ACTT2S-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =2a; dv com /dt = 10 v/s; gate open circuit; see figure 14 ; see figure 15 3--a/ms v cl clamping voltage i cl = 0.1 ma; t p =1ms; t j = 25 c 850 - - v ...
Description AC Thyristor Triac power switch

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    NXP Semiconductors N.V.
Part No. ACT108W-600D
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =1a; dv com /dt = 15 v/s; gate open circuit; see figure 15 ; see figure 16 0.15 - - a/ms v cl clamping voltage i cl = 100 a; t p =1ms; t j 125 c; see...
Description AC Thyristor power switch

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    BCR5PM

Mitsubishi Electric Semiconductor
Part No. BCR5PM
OCR Text ...l-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ] 5. high sensitivity (i gt 10ma) is also available. (i gt item 1 ) test co...
Description LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE

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    BCR08AS-8

POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR08AS-8
OCR Text ...tical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # $ ! @ # $ Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG...
Description LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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    BCR08AS

Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Part No. BCR08AS
OCR Text ...tical-rate of rise of off-state commutating voltage 4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # $ ! Gate trigger current 2 @ # $ Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C Test cond...
Description LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

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For commutating Found Datasheets File :: 2416    Search Time::4.922ms    
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