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EL6915CL TDA8260 2SK1393 QBT40IG0 PT27313 A44E1 EM73962 22120
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  dr. Datasheet PDF File

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    TOSHIBA
Part No. SSM6J402TU
OCR Text ... drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 common sourc...
Description Small-signal MOSFET

File Size 211.83K  /  6 Page

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    TOSHIBA
Part No. TPN6R303NC
OCR Text ...l i drp v dsf test condition i dr = 20 a, v gs = 0 v min typ. max 107 -1.2 unit a v note 6: ensure that the channel temperature does not exceed 150 . 2014-02-18 rev.2.0 tpn6r303nc 4 7. 7. 7. 7. marking marking marking marking...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 234.58K  /  9 Page

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    TOSHIBA
Part No. TPC8227-H
OCR Text ...l i drp v dsf test condition i dr = 5.1 a, v gs = 0 v min typ. max 20.4 -1.2 unit a v note 8: ensure that the channel temperature does not exceed 150 . 7. 7. 7. 7. marking (note) marking (note) marking (note) marking (note) fig....
Description Power MOSFET (N-ch dual)

File Size 258.71K  /  9 Page

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    TOSHIBA
Part No. TK46E08N1
OCR Text ...) (note 6) (note 6) symbol i dr i drp v dsf t rr q rr test condition i dr = 46 a, v gs = 0 v i dr = 46 a, v gs = 0 v -di dr /dt = 100 a/ s min typ. 59 97 max 46 169 -1.2 unit a v ns nc note 5: ensure that the channel...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 250.08K  /  9 Page

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    TK46E08N1

Toshiba Semiconductor
Part No. TK46E08N1
OCR Text ...) (note 6) (note 6) symbol i dr i drp v dsf t rr q rr test condition i dr = 46 a, v gs = 0 v i dr = 46 a, v gs = 0 v -di dr /dt = 100 a/ s min typ. 59 97 max 46 169 -1.2 unit a v ns nc note 5: ensure that the channel...
Description Switching Voltage Regulators

File Size 250.60K  /  9 Page

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    SSM5H16TU

Toshiba Semiconductor
Part No. SSM5H16TU
OCR Text ...7 drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 ?0.5 ?1.0 ? 25 c ta =100 c 25 c ?1.5 common source v gs = 0 v g d s i dr t off 10 c iss c oss c rss 500 300 10...
Description Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)

File Size 186.02K  /  7 Page

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    SSM3J331R

Toshiba Semiconductor
Part No. SSM3J331R
OCR Text ... fig. 7.9 7.9 7.9 7.9 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 7.10 7.10 7.10 7.10 c - v c - v c - v c - v ds ds ds ds fig. fig. fig. fig. 7.11 7.11 7.11 7.11 t - i t - i t - i t - i d d d d fig. fi...
Description Power Management Switches

File Size 231.99K  /  9 Page

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    TOSHIBA
Part No. SSM3J331R
OCR Text ... fig. 7.9 7.9 7.9 7.9 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 7.10 7.10 7.10 7.10 c - v c - v c - v c - v ds ds ds ds fig. fig. fig. fig. 7.11 7.11 7.11 7.11 t - i t - i t - i t - i d d d d fig. fi...
Description Small-signal MOSFET

File Size 231.48K  /  9 Page

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    TOSHIBA
Part No. TPCC8006-H
OCR Text ...rward voltage (diode) v dsf i dr = 22 a, v gs = 0 v ? ? ? 1.2 v r l = 1.36 v dd 15 v 0 v v gs 10 v 4.7 i d = 11 a v out tpcc8006-h 2009-07-15 4 i d ? v ds 2 40 30 20 10 0 50 0 0.8 v gs = 3.2 v 1.6 1.2 0....
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 234.32K  /  7 Page

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    TOSHIBA
Part No. TPCA8085
OCR Text ...l i drp v dsf test condition i dr = 40 a, v gs = 0 v min typ. max 120 -1.2 unit a v note 6: ensure that the channel temperature does not exceed 175 . 2014-01-17 rev.4.0 tpca8085 4 7. 7. 7. 7. marking marking marking marking f...
Description MOSFETs
Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 235.22K  /  9 Page

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