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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF2040 Q62702-F1775
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| OCR Text |
...= 0 V
Drain current
I DSS I DSX VG2S(p) VG1S(p)
A mA V
VDS = 5 V, V G1S = 0 V, VG2S = 4 V
Drain-source current
VDS = 5 V, V G2...1-source pinch-off voltage
VDS = 5 V, V G2S = 4 V, I D = 20 A
AC characteristics Forward transco... |
| Description |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
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| File Size |
15.27K /
2 Page |
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it Online |
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Allegro
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| Part No. |
6B595
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| OCR Text |
...n-State Resistance Symbol V (BR)DSX IDSX Test Conditions IO = 1 mA VO = 40 V, V DD = 5.5 V VO = 40 V, V DD = 5.5 V, TA = 125C Min. 50 -- -- -- -- -- -- -- -- 4.4 4.0 -- -- -- -- -- -- -- -- -- Typ. -- 0.1 0.15 4.2 6.8 5.5 90 -- -- 4.49 4.2 ... |
| Description |
8-BIT SERIAL-INPUT, DMOS POWER DRIVER
From old datasheet system
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| File Size |
89.61K /
10 Page |
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it Online |
Download Datasheet |
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Toshiba Semiconductor
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| Part No. |
TPC8207
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| OCR Text |
...bol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -...1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD ~ 16 V, VGS = 5 V, ID = 6 A |Yfs| Ciss Crss C... |
| Description |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
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| File Size |
223.12K /
7 Page |
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it Online |
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