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  efd20 high frequency transform Datasheet PDF File

For efd20 high frequency transform Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS

Cornell Dubilier Electr...
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Cornell Dubilier Electronics
Part No. DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS10D47K-F DPPS10D56K-F DPPS10D68K-F DPPS10D82K-F DPPS10S12K-F DPPS10S15K-F DPPS10S18K-F DPPS10S1K-F DPPS10S22K-F DPPS10S27K-F DPPS10S33K-F DPPS16D12K-F DPPS16D15K-F DPPS16D18K-F DPPS16D1K-F DPPS16D22K-F DPPS16S18K-F DPPS16D82K-F DPPS20D82K-F DPPS20D12K-F DPPS20S12K-F DPPS16D27K-F DPPS16D33K-F DPPS16D39K-F DPPS16D47K-F DPPS20D68K-F DPPS20D39K-F DPPS20S15K-F DPPS20S1K-F
Description high Voltage, high frequency, Ultra high Peak Currents

File Size 214.93K  /  2 Page

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    2SA1683 2SC4414

SANYO[Sanyo Semicon Device]
Part No. 2SA1683 2SC4414
Description high-frequency General-Purpose Amp/ high-frequency Power Amp Applications
high-frequency General-Purpose Amp, high-frequency Power Amp Applications

File Size 115.49K  /  4 Page

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    AD9142

Analog Devices
Part No. AD9142
Description Dual, 16-Bit, 1600 MSPS, T<span style="text-transform: lowercase">x</span>DAC Digital-to-Analog Converter

File Size 2,154.99K  /  64 Page

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    ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6

AD[Analog Devices]
ANALOG DEVICES INC
Part No. ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6
Description 0.3-25V; high frequency switch mode Li-Ion battery charger. For portable computers, fast chargers
Analog IC
high-frequency Switch Mode Li-Ion Battery Charger
2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO24

File Size 195.96K  /  12 Page

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    ADUM7641 ADUM7642 ADUM7643 ADUM7640

Analog Devices
Part No. ADUM7641 ADUM7642 ADUM7643 ADUM7640
Description 1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (5/1 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (4/2 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (3/3 Channel Directionality)
1 <span style="text-transform: lowercase">k</span>V RMS Six-Channel Digital Isolators (6/0 Channel Directionality)

File Size 474.49K  /  20 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    2SK436

Sanyo Semicon Device
Renesas Electronics Corporation
Part No. 2SK436
Description high-frequency/Low-frequency General-Purpose Amp Applications
high-frequency,Low-frequency General-Purpose Amp Applications

File Size 162.40K  /  6 Page

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    2SC4215 E000919

Toshiba Semiconductor
Part No. 2SC4215 E000919
Description NPN EPITAXIAL PLANAR TYPE (high frequency FM/ RF/ MIX/ IF AMPLIFIERAPPLICATIONS)
high frequency AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (high frequency FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

File Size 171.93K  /  4 Page

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    AD5317R

Analog Devices
Part No. AD5317R
Description Quad, 10-Bit <span style="text-transform: lowercase"> <em>nano</span></em>DAC<sup>?</sup> with 2 ppm/°C reference, SPI Interface

File Size 784.13K  /  28 Page

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    2SC5434 2SC5434-T1

NEC[NEC]
NEC Corp.
Part No. 2SC5434 2SC5434-T1
Description Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR high-frequency LOW-NOISE AMPLIFICATION
high-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体

File Size 59.68K  /  8 Page

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For efd20 high frequency transform Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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