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  fe-110 Datasheet PDF File

For fe-110 Found Datasheets File :: 3190    Search Time::1.531ms    
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    6MBP100RA120

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FUJI[Fuji Electric]
Part No. 6MBP100RA120
OCR Text ... R e ve rs e d b ia s e d s a fe o p e ra tin g a re a V cc = 1 5 V ,T j < 1 2 5 C = IG B T 0 .1 SC SO A (n on -re pe titiv e p u ls e ) RBSO A (R e p e titiv e p u ls e ) 0 2 00 4 00 6 00 8 00 1 000 1 200 1 400 0 .0 1 0 .0 0 ...
Description IGBT(1200V/100A)

File Size 318.24K  /  7 Page

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    BU2508AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2508AF
OCR Text ...R IC DIODE ICsat 100 h FE t 5V IB IBend 10 t 20us 26us 64us VCE Tj = 25 C Tj = 125 C 1V 1 0.01 t 0.1 IC ...110 100 90 80 70 60 50 40 30 20 10 0 PD% 0 20 40 60 80 Ths / C 100 120 14...
Description Silicon Diffused Power Transistor

File Size 70.48K  /  7 Page

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    BU2508AW

PHILIPS[Philips Semiconductors]
Part No. BU2508AW
OCR Text ...A IC DIODE ICsat 100 h FE t 5V IB IBend 10 t 20us 26us 64us VCE Tj = 25 C Tj = 125 C 1V 1 0.01 t 0.1 IC ...110 100 90 80 70 60 50 40 30 20 10 IC = 4.5A 3.5A 100 10 0.1 1 IB / A 10 0 0 20 40...
Description Silicon Diffused Power Transistor

File Size 78.21K  /  7 Page

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    BU2508AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2508AX
OCR Text ...R IC DIODE ICsat 100 h FE t 5V IB IBend 10 t 20us 26us 64us VCE Tj = 25 C Tj = 125 C 1V 1 0.01 t 0.1 IC ...110 100 90 80 70 60 50 40 30 20 10 0 PD% 0 20 40 60 80 Ths / C 100 120 14...
Description Silicon Diffused Power Transistor

File Size 74.29K  /  7 Page

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    BU2508A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2508A
OCR Text ...08A IC DIODE ICM 100 h FE t 5V IB IBend 10 t 20us 26us 64us VCE Tj = 25 C Tj = 125 C 1V 1 0.01 t 0.1 IC ...110 100 90 80 70 60 50 40 30 20 10 IC = 4.5A 3.5A 100 10 0.1 1 IB / A 10 0 0 20 40...
Description Silicon Diffused Power Transistor

File Size 54.77K  /  7 Page

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    BU2508DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2508DX
OCR Text ...R IC DIODE ICsat 100 h FE BU2508DF t Tj = 25 C Tj = 125 C 5V IB IBend 10 t 20us 26us 64us VCE 1V 1 0.01...110 100 90 80 70 60 50 40 30 20 10 PD% IC = 4.5A 3.5A 100 10 0 0.1 1 IB / A 10 ...
Description Silicon Diffused Power Transistor

File Size 73.13K  /  7 Page

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    IRG4PC50UD IRG4PC50UD-E

IRF[International Rectifier]
Part No. IRG4PC50UD IRG4PC50UD-E
OCR Text ...0V G= T J = 125 C 100 S A FE O P E R A TIN G A R E A 4.0 10 2.0 0.0 0 10 20 30 40 50 60 A 1 1 10 100 1000 I C , C o lle c to r-to-E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig...
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package

File Size 212.73K  /  10 Page

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    LA9242M

SANYO[Sanyo Semicon Device]
Part No. LA9242M
OCR Text ...amplifier (with AGC), SLC, APC, FE, TE (with VCA and auto-balance function), focus servo amplifier (with offset cancellation function), spin...110-8534 JAPAN 41902AS (KT) No.7097-1/20 0.1 SANYO : QFP64E 0.8 LA9242M Specifications ...
Description Analog Signal Processor ASP for CD Players

File Size 150.48K  /  20 Page

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    MJE15032 MJE15033 ON2013

Motorola, Inc
ONSEMI[ON Semiconductor]
Part No. MJE15032 MJE15033 ON2013
OCR Text ... NPN -- MJE15032 1000 150C h FE, DC CURRENT GAIN 25C 100 -55C h FE, DC CURRENT GAIN 100 -55C 10 1000 PNP -- MJE15033 150C 25C 10...110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 ...
Description 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
From old datasheet system

File Size 139.10K  /  6 Page

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    2SC4511

SANKEN[Sanken electric]
Part No. 2SC4511
OCR Text ...300 DC Curr ent Gain h F E h FE - I C Temperature Characteristics (Typical) (V C E= 4V) 200 125C DC Cur rent Gain h FE j- a( C/W) ...110 ...
Description Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

File Size 23.05K  /  1 Page

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