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37300 SA602 EN5337 K1K27 FU220N AZ10860 ISL54416 77569E3
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  fm receiving condition analyze Datasheet PDF File

For fm receiving condition analyze Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    DF2S16FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S16FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 130.11K  /  3 Page

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    DF3A5.6LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 125.13K  /  3 Page

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    DF2S8.2FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.55K  /  3 Page

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    DF3A3.3FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.06K  /  3 Page

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    DF3A3.3FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 124.78K  /  3 Page

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    DF3A3.6FE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 150.59K  /  3 Page

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    DF3A3.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.32K  /  3 Page

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    DF3A5.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.71K  /  3 Page

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    DF3A5.6FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 154.38K  /  3 Page

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    DF3A5.6LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 131.60K  /  3 Page

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For fm receiving condition analyze Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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