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  hfe35 Datasheet PDF File

For hfe35 Found Datasheets File :: 737    Search Time::1.5ms    
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    BC63916

FAIRCHILD[Fairchild Semiconductor]
Part No. BC63916
OCR Text ...BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emit...5.0 100 10 250 0.5 1 V V MHz Typ. Max. Units V V V nA A Collector-Emitter Saturation Voltage Base...
Description From old datasheet system
Switching and Amplifier Applications

File Size 54.48K  /  3 Page

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    Sanyo
Part No. 2SC4105 0429
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings ...5 2.5 0.3 20 50 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CBO...
Description NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications
From old datasheet system

File Size 91.48K  /  4 Page

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    2SD1499

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1499
OCR Text ...C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 100V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1...5 4 3 2 1 0 TC=100C -25C (3) 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 ...
Description Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Silicon NPN triple diffusion planar type(For high power amplification)

File Size 43.22K  /  2 Page

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    HBU406

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HBU406
OCR Text ...VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 Min. 200 25 30 10 Typ. Max. 5 1 1 1.2 125 Unit V mA mA V V Test Conditions IC=100mA, IB=0 VCE=400V VEB=6V, IC=0 IC=5A, IB=0.5A IC=5A, IB=0.5A IC=500mA, VCE=5V IC=2A, VCE=5V IC=5A, VCE=5V *Pulse Test :...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 22.43K  /  2 Page

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    2N2907AUB

SEMICOA[Semicoa Semiconductor]
Part No. 2N2907AUB
OCR Text ...ulse test) Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Min 75 100 100 100 50 --------- Typ 225 250 --180 80 0.18 0.5 0.87 1.0 Max --450 --300 --0.4 1.6 1.3 2.6 Unit ----------V dc V dc V dc V ...
Description Type 2N2907AUB Geometry 0600 Polarity PNP
Type 2N2907AUB Geometry 0600 Polarity PNP

File Size 44.78K  /  2 Page

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    2N4261

SEMICOA[Semicoa Semiconductor]
Part No. 2N4261
OCR Text ...IC = 10 mA Symbol hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VBE1 VBE2 Min 25 30 20 15 --------- Max --150 ----0.15 0.35 0.8 1.0 ...5.0 mA, f = 100 MHz VCE = 10 V, IC = 10 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 4.0 V,...
Description Type 2N4261 Geometry 0014 Polarity PNP
Type 2N4261 Geometry 0014 Polarity PNP

File Size 45.41K  /  2 Page

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    Sanyo
Part No. 2SC4106
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings ...5 2.5 0.3 20 80 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CBO...
Description NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications

File Size 90.95K  /  4 Page

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    Sanyo
Part No. 2SC4109
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2A VCE=5V, IC=10A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings m...5 2.5 0.3 20 230 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CB...
Description NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator Applications

File Size 94.57K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SD1975A 2SD1975 0216
OCR Text ...C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20...5 V V MHz pF 200 min typ max 50 50 50 Unit A A Forward current transfer ratio Base to emitter ...
Description Power Transistors
From old datasheet system

File Size 41.31K  /  3 Page

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    2SD2425 2SD2425AB3

NEC Corp.
NEC Electronics
NEC[NEC]
Part No. 2SD2425 2SD2425AB3
OCR Text ...time Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) ton tstg tf Conditions VCB = 50 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 1.0 V, IC = 0.1 A VCE = 1.0 V, IC = 2.0 A VCE = 2.0 V, IC = 5.0 A IC = 2.0 A, IB = 0.2 A IC = 2.0 A, IB = 0.2 A IC = ...
Description TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor

File Size 122.68K  /  6 Page

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