high power type pdf Datasheet P14 Description --- IC-ON-LINE


	Part Number	Hot Search : HD64646 G299206 6404A BU3150AF DZ2W033 JHB1602E KNP100 X28C512D
	Product Description
	Full Text Search

high power type Datasheet PDF File

For high power type Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SC5077 2SC5077A
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, power TRANSISTOR
File Size	61.72K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM130EZ-24 TM130EZ-2H TM130GZ-24 TM130GZ-2H TM130RZ-24 TM130RZ-2H
Description	high VOLTAGE high power GENERAL USE INSULATED type 高压大功率常规使用绝缘型 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高压大功率常规使用绝缘型
File Size	59.82K / 4 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 2SC942TM E001079
Description	TRANSISTOR SILICON NPN EPIITAXIAL type 晶体管型硅npn型EPIITAXIAL SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS NPN EPITAXIAL type (high/ AM/ AM high FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) NPN EPITAXIAL type (high, AM, AM high FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) From old datasheet system
File Size	228.14K / 4 Page	View it Online	Download Datasheet

				NEC Corp. NEC, Corp.
Part No.	LD7215 LD7215C LD7215D
Description	6 GHz / 3 kW / HELIX type / PPM FOCUSING / high power GAIN / FLAT GAIN VARIATION 6 GHz, 3 kW, HELIX type, PPM FOCUSING, high power GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
File Size	89.69K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
Part No.	MP4305
Description	power Transistor Module Silicon PNP Epitaxial type (Darlington power transistor 4 in 1) high power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA power Transistor Module Silicon PNP Epitaxial type (Darlington power transistor 4 in 1)
File Size	141.27K / 6 Page	View it Online	Download Datasheet

				ETC
Part No.	FL850-03-80
Description	high power type LED
File Size	73.33K / 1 Page	View it Online	Download Datasheet

				Panasonic, Corp. Panasonic Corporation Panasonic Semiconductor
Part No.	2SC3970 2SC3970A
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 1.5 A, 500 V, NPN, Si, power TRANSISTOR, TO-220F
File Size	58.33K / 3 Page	View it Online	Download Datasheet

				Panasonic Industrial Solutions PANASONIC[Panasonic Semiconductor]
Part No.	2SC4953
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 3 A, 400 V, NPN, Si, power TRANSISTOR, TO-220AB
File Size	41.24K / 2 Page	View it Online	Download Datasheet

				Panasonic, Corp.
Part No.	2SC3978A
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, power TRANSISTOR, TO-220F
File Size	171.47K / 4 Page	View it Online	Download Datasheet

For high power type Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

▲Up To Search▲

Price and Availability