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For id-1.1a Found Datasheets File :: 923 Search Time::0.891ms
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				Sanyo
Part No.	2SK1887
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-2...11A ID=11A, VGS=10V ID=11A, VGS=4V 1.0 9 14.5 30 40 40 55 Conditions Ratings min 30 20 100 10 2.0 ty...
Description	N-Channel Silicon MOSFET
File Size	96.09K / 4 Page	View it Online	Download Datasheet

				Intersil
Part No.	FSYA9250R FSYA9250D FN4583
OCR Text	.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...11A, VGS = -12V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Sourc...
Description	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
File Size	55.57K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STA4470
OCR Text	...iable. Suface Mount Package. ID 11A RDS(ON) (m) Max 12 @ VGS=10V 16 @ VGS=4.5V PDIP-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	144.48K / 6 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SK3507
OCR Text	...C TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) Built-in G-S protection diode Surface mount package available 2.3 +0.15 4.60-0.15 Unit: mm ...11A,VGS(on)=10V,RL=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 16V,VDS=0 VDS=1...
Description	MOS Field Effect Transistor
File Size	42.59K / 1 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB25NM50N07 STB25NM50N
OCR Text	...140 <0.140 <0.140 <0.140 <0.140 ID 3 3 22A 22A 22A(1) 22A 22A 1 2 1 2 TO-220FP 3 1 TO-220 DPAK 3 12 1. Limite...11A 2 3 Min. 500 44 1 10 100 4 Typ. Max. Unit V V/ns A A nA V 0.110 0.140 1. Characteristic v...
Description	N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
File Size	485.98K / 18 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR2605
OCR Text	...DSS = 55V G RDS(on) = 0.075 ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques...11A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 11A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS...
Description	55V Single N-Channel HEXFET Power MOSFET in a D-Pak package HEXFET? Power MOSFET
File Size	161.20K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDA20N50F
OCR Text	...on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A * Low gate charge ( Typ. 50nC ) * Low Crss ( Typ. 27pF ) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant UniFETTM tm Description These N-Channel enhancem...
Description	N-Channel MOSFET 500V, 22A, 0.26Ω N-Channel MOSFET 500V, 22A, 0.26ヘ
File Size	562.29K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STS11NF30L STS11NF30L07
OCR Text	... VDSS 30V RDS(on) <0.009 ID 11A Optimal RDS(on) x Qg trade-off Conduction losses reduced S0-8 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. Th...
Description	N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET II Power MOSFET N-channel 30V - 0.0085ヘ - 11A SO-8 Low gate charge STripFET⑩ II Power MOSFET
File Size	312.08K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STL100NHS3LL
OCR Text	...HS3LL VDSS 30V RDS(on) < 0.0042 ID 22A(1) 1. This value is rated according to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduc...11A VGS= 4.5V, ID= 11A VGS=10V, ID=11A@125C VGS=4.5V, ID=11A@125C 1 Min. 30 500 100 2.5 0.0032 0.004...
Description	N-channel 30V - 0.0032Ω - 22A - PowerFLAT?(6x5) STripFET?Power MOSFET plus monolithic Schottky N-channel 30V - 0.0032ヘ - 22A - PowerFLAT⑩ (6x5) STripFET⑩ Power MOSFET plus monolithic Schottky N-channel 30V - 0.0032Ω - 22A - PowerFLAT (6x5) STripFET Power MOSFET plus monolithic Schottky
File Size	215.18K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB22NS25Z06
OCR Text	... 250V RDS(on) <0.15 <0.15 ID 22A 22A 3 100% avalanche tested Extremely high dv/dt capability TO-220 1 2 3 1 DPAK Descri...11A 2 3 0.13 Min. 250 10 100 10 4 0.15 Typ. Max. Unit V A A A V Table 5. Symbol gfs (1) Ciss Co...
Description	N-channel 250V - 0.13ヘ - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY⑩ Power MOSFET
File Size	288.36K / 14 Page	View it Online	Download Datasheet

For id-1.1a Found Datasheets File :: 923 Search Time::0.891ms
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