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id-34a Datasheet PDF File

For id-34a Found Datasheets File :: 230 Search Time::1.641ms
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				International Rectifier
Part No.	IRF7853PBF IRF7853TRPBF
OCR Text	ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin...34A BOTTOM 5.0A TOP Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 1500 1000 15...
Description	Primary Side Switch in Bridge Topology HEXFET Power MOSFET
File Size	205.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLR3705Z IRLU3705Z
OCR Text	...f other applications. G S ID = 42A D-Pak IRLR3705Z Max. 89 63 42 360 130 0.88 16 I-Pak IRLU3705Z Units A Absolute Maximu...34A e = 21A e VDS = 55V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V ID = 42A VDS = 44V VGS = 5.0V V...
Description	Specifically designed for Automotive applications,this HEXFET Power MOSFET
File Size	283.97K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDB7051L NDP7051L
OCR Text	... Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP7051L 50 50 16 25 67 200 130 0.8...34A V GS = 5.0V 1.5 TJ = 125C R DS(ON) , NORMALIZED 25C 1 0.5 -55C 0 -25 0 25...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	352.67K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF34N20L
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...34A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ...
Description	200V LOGIC N-Channel MOSFET
File Size	647.93K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTMAM002 FQB34N20LTM
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...34A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ...
Description	200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 200V N-Channel Logic Level QFET
File Size	660.39K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQAF34N20L
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...34A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ...
Description	200V LOGIC N-Channel MOSFET
File Size	657.16K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3873-01
OCR Text	...100 7v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 1...34a i as =56a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starti...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	112.05K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHG9110 2072
OCR Text	....1 IRHG93110 300K Rads (Si) 1.1 ID -0.75A -0.75A 100V, QUAD P-CHANNEL RAD-Hard HEXFET TM (R) MOSFET TECHNOLOGY MO-036AB Internat...34A -0.47A BOTTOM -0.75A TOP tp 0.0 1 120 15V 80 Fig 12a. Unclamped Inductive Test...
Description	RADIATION HARDENED POWER MOSFET From old datasheet system
File Size	118.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI3303
OCR Text	ID = 25A HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Si...34A I D , Drain-to-Source Current (A) 1.5 TJ = 25C TJ = 175C 10 1.0 1 0.5 0.1 ...
Description	HEXFET Power MOSFET HEXFET? Power MOSFET
File Size	153.46K / 8 Page	View it Online	Download Datasheet

For id-34a Found Datasheets File :: 230 Search Time::1.641ms
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