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				IRF[International Rectifier]
Part No.	IRF3515L IRF3515s
OCR Text	... 0.001 0.01 t1/ t 2 0.01 j = P DM x Z thjC +T C 1 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Tra...s + V - DD A 800 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D ss tp ...
Description	Power MOsFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOsFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	....5V 20s PULsE WIDTH T = 25 C j 1 10 100 1 0.1 10 0.1 20s PULsE WIDTH T = 175 C j 1 10 100 VDs , Drain-to-source Voltage (...s Duty Factor 0.1 % 120 80 Fig 10a. switching Time Test Circuit VDs 90% 40 0 25 50 ...
Description	30V single N-Channel HEXFET Power MOsFET in a TO-220AB package Power MOsFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOsFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOsFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOsFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704s IRF3704sTRL IRF3704sTRR
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.1 0.0001 0.001 0.01 1 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fi...s s tp VD s L DRIVER 100 RG 20 V D.U .T IA s + - VD D 0 25 50 75 100 125 150 175 ...
Description	20V single N-Channel HEXFET Power MOsFET in a D2-Pak package 20V single N-Channel HEXFET Power MOsFET in a TO-262 package 20V single N-Channel HEXFET Power MOsFET in a TO-220AB package Power MOsFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOsFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOsFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOsFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOsFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; series:91935 RoHs Compliant: Yes 功率MOsFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANsIsTOR \| MOsFET \| N-CHANNEL \| 20V V(BR)Dss \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706s
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.0001 0.001 0.01 0.1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse D...s + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit 100 V ...
Description	Power MOsFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOsFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOsFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707s IRF3707PBF IRF3707sTRL IRF3707sTRR
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.1 0.0001 0.001 0.01 1 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fi...s s tp VD s L DRIVER 100 RG 20 V D.U .T IA s + - VD D 0 25 50 75 100 125 150 175 ...
Description	30V single N-Channel HEXFET Power MOsFET in a D2-Pak package 30V single N-Channel HEXFET Power MOsFET in a TO-262 package 30V single N-Channel HEXFET Power MOsFET in a TO-220AB package Power MOsFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOsFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOsFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708s
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.1 0.0001 0.001 0.01 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) F...s s tp VD s L DRIVER RG 20 V D.U .T IA s + - VD D 0 25 50 75 100 125 150 175 A IA...
Description	Power MOsFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOsFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOsFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709s IRF370B9L IRF370B9s F3709s
OCR Text	...2 2. Peak T = P DM x ZthjC + TC j 0.001 0.01 0.1 PDM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effe...s tp 0.0 1 + - VD D A 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D ss tp ...
Description	Power MOsFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOsFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOsFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOsFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOsFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOsFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOsFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710s
OCR Text	... Tj = 2 5 C 100 2.0 T j = 1 7 5 C 1.5 10 1.0 0.5 1 4 5 6 7 V Ds = 50V 2 0 s P UL s E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G s = 1 0V 100 120 140 160 180 A V G s , G ate-to -so urce...
Description	Power MOsFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOsFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOsFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOsFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...in-to-source On Resistance T j = 175C 10.00 2.0 (Normalized) 1.5 T j = 25C 1.00 1.0 0.5 0.10 3.0 4.0 5.0 VDs = ...s Duty Factor 0.1 % 20 Fig 10a. switching Time Test Circuit 10 VDs 90% 0 25 50 75 100 ...
Description	Power MOsFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOsFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOsFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V single N-Channel HEXFET Power MOsFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711s
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.001 0.01 0.1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...s Web site. 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTEs : 1. COMFORMs TO EIA-418. 2. CONTROLL...
Description	Power MOsFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOsFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOsFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOsFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOsFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

For j s Found Datasheets File :: 153523 Search Time::2.688ms
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