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![3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D5 3EZ11D5 3EZ120D5 3EZ130D5 3EZ13D5 3EZ140D5 3EZ14D5 3EZ150D5 3EZ15D5](Maker_logo/jinan_gude_electronic_device.GIF)
JGD[Jinan Gude Electronic Device] 济南固锝电子器件有限公司 Jinan Gude Electronic Device Co., Ltd. 娴???洪??靛??ㄤ欢?????? http:// Jinan Gude Electronic D...
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Part No. |
3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D5 3EZ11D5 3EZ120D5 3EZ130D5 3EZ13D5 3EZ140D5 3EZ14D5 3EZ150D5 3EZ15D5 3EZ160D5 3EZ16D5 3EZ170D5 3EZ17D5 3EZ180D5 3EZ18D5 3EZ190D5 3EZ19D5 3EZ200D5 3EZ20D5 3EZ22D5 3EZ24D5 3EZ27D5 3EZ28D5 3EZ3.9D5 3EZ30D5 3EZ33D5 3EZ36D5 3EZ39D5 3EZ4.7D5 3EZ43D5 3EZ47D5 3EZ5.1D5 3EZ51D5 3EZ56D5 3EZ6.2D5 3EZ6.8D5 3EZ62D5 3EZ68D5 3EZ7.5D5 3EZ75D5 3EZ8.2D5 3EZ82D5 3EZ9.1D5 3EZ91D5 -3EZ75D5 3EZ160D 3EZ160D1 3EZ160D10 3EZ180D 3EZ180D10 3EZ180D1 3EZ180D2 3EZ180D4 3EZ180D3 3EZ140D4 3EZ140D2 3EZ140D3 3EZ140D1 3EZ140D10 3EZ120D3 3EZ120D4 3EZ120D1 3EZ120D2 3EZ190D 3EZ190D3 3EZ190D4 3EZ190D10 3EZ130D2 3EZ130D 3EZ130D1 3EZ130D10 3EZ130D3 3EZ130D4 3EZ200D 3EZ200D2 3EZ200D4 3EZ200D3 3EZ200D10 3EZ200D1
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Description |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance. 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance. 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance. 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance. surface mount silicon Zener diodes 硅表面贴装齐纳二极管 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance. 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance. 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance. 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance. 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance. 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance. 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance. 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance. 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance. 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance. 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance. 3W SILICON ZENER DIODE
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File Size |
145.99K /
2 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
BD241CFP
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Description |
Transient Surge Protection Thyristor; Package/Case:MS-013; current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; current Rating:2.2A; Forward current:5A; Forward voltage:200V; Holding current:150mA 晶体管|晶体管|叩| 100V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
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File Size |
95.82K /
3 Page |
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it Online |
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![2N5484 2N5485 2N5486 SST5484 SST5485 SST5486](Maker_logo/vishay_siliconix.GIF)
Vishay Siliconix Vishay Intertechnology,Inc.
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Part No. |
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486
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Description |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; current, Id cont:4.5A; current, Idm pulse:-20A; power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; current, Id cont:5.6A; current, Idm pulse:-30A; power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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File Size |
52.89K /
7 Page |
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it Online |
Download Datasheet
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![GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V](Maker_logo/stmicroelectronics.GIF)
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V8AS-10HB3 GAL16V8AS-10HC1 GAL16V8AS-10HC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12HB1 GAL16V8AS-12HB3 GAL16V8AS-12HC1 GAL16V8AS-12HC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15HB1 GAL16V8AS-15HB3 GAL16V8AS-15HC1 GAL16V8AS-15HC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20HB1 GAL16V8AS-20HB3 GAL16V8AS-20HC1 GAL16V8AS-20HC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20HB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
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Description |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS EMI/RFI FILTER IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; voltage, Vces:600V; current, Ic continuous a max:174A; voltage, Vce sat max:1.9V; Case style:SEMITOP 4; current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; voltage, Vceo:600V; voltage, Vce sat max:2.2V; current, Ic continuous a max:24A; current, Icm pulsed:22A; power, Pd:1700W; Time, rise:30ns; EPROM CMOS Programmable Logic Device
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File Size |
736.53K /
14 Page |
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it Online |
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Price and Availability
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