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  low-trr Datasheet PDF File

For low-trr Found Datasheets File :: 29224    Search Time::3.422ms    
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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...trr (ns) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...trr (ns) 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25 C Capacitance C (pF) Coss 20 10 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...trr (ns) 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Rever...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G...trr (ns) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G...trr (ns) 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Rever...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text Low on-resistance R DS(on) = 0.16 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D G...trr (ns) 5000 200 100 50 1000 Ciss 300 Coss 100 30 Crss 20 10 5 -0.1 di / dt = 50 A / s ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D G...trr (ns) 100 50 20 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Dynamic ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D ...trr (ns) 10000 3000 1000 300 100 200 100 50 Capacitance C (pF) Coss 20 10 5 -0.1 di /...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D ...trr (ns) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D ...trr (ns) 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25 C Capacitance C (pF) Coss 20 10 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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For low-trr Found Datasheets File :: 29224    Search Time::3.422ms    
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