...(oor='#FF0000'>n)
(1 er sh ot) (T atio c= or='#FF0000'>n 25 C )
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -3...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng
...
s
20
-1
(T atio c= or='#FF0000'>n Operatioor='#FF0000'>n ior='#FF0000'>n 25 this area is C ) limited by R DS(oor='#FF0000'>n)
Op
er
ms s (1 s
m
ho
t)
-0.1
...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng
...
s
ra
(1
tio
sh
or='#FF0000'>n
(T
ot
)
10
Operatioor='#FF0000'>n ior='#FF0000'>n this area is limited by R DS(oor='#FF0000'>n)
c=
25
0
50
100
1...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng
... (1
pe
ra
tio
sh
or='#FF0000'>n
ot
10
c= Operatioor='#FF0000'>n ior='#FF0000'>n 25 this area is limited by R DS(oor='#FF0000'>n)
(T
)
0
50
100
150 Tc ...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng
...
pe
40
ra
tio
(1
or='#FF0000'>n
sh
(T
ot
)
20
Operatioor='#FF0000'>n ior='#FF0000'>n this area is limited by R DS(oor='#FF0000'>n)
c=
25
0
50
10...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Power switchior='#FF0000'>ng MOSFET Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng 硅P通道MOS FET的高速电源开
...(oor='#FF0000'>n)
(1 er sh ot) (T atio c= or='#FF0000'>n 25 C )
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -3...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P-Chaor='#FF0000'>nor='#FF0000'>nel MOS FET Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng Power switchior='#FF0000'>ng MOSFET
... sh ot) (T atio Operatioor='#FF0000'>n ior='#FF0000'>n c= or='#FF0000'>n 25 this area is C limited by R DS(oor='#FF0000'>n) )
Op
-0.1
Ta = 25 C
0
50
100
150 Tc (C)
200
...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Power switchior='#FF0000'>ng MOSFET Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Power Switchior='#FF0000'>ng
...d by RDS(oor='#FF0000'>n)
DC O pe t ra io or='#FF0000'>n
0
50 100 Ambieor='#FF0000'>nt Temperature
150 200 Ta ( C)
-0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2
Ta = 25 C...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n P Chaor='#FF0000'>nor='#FF0000'>nel MOS FET High Speed Switchior='#FF0000'>ng
or='#FF0000'>n-Chaor='#FF0000'>nor='#FF0000'>nel MOS FET
Applicatioor='#FF0000'>n
Low frequeor='#FF0000'>ncy power amplifier Complemeor='#FF0000'>ntary pair with 2SJ160, 2SJ161 aor='#FF0000'>nd 2SJ162
Features
* * * * * * *...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
Silicoor='#FF0000'>n or='#FF0000'>n Chaor='#FF0000'>nor='#FF0000'>nel MOS FET Silicoor='#FF0000'>n or='#FF0000'>n-Chaor='#FF0000'>nor='#FF0000'>nel MOS FET
or='#FF0000'>n-Chaor='#FF0000'>nor='#FF0000'>nel Juor='#FF0000'>nctioor='#FF0000'>n FET
Applicatioor='#FF0000'>n
Low frequeor='#FF0000'>ncy / High frequeor='#FF0000'>ncy amplifier
Outlior='#FF0000'>ne
MPAK
3 1 2
1. Draior='#FF0000'>n 2. Source 3. Gate
2...or aor='#FF0000'>ny third party's pateor='#FF0000'>nt, copyright, trademark, or other ior='#FF0000'>ntellectual property rights for ior='#FF0000'>nforma...
Description
&or='#FF0000'>nbsp;&or='#FF0000'>nbsp;&or='#FF0000'>nbsp;Silicoor='#FF0000'>n or='#FF0000'>n-Chaor='#FF0000'>nor='#FF0000'>nel Juor='#FF0000'>nctioor='#FF0000'>n FET