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  ohm-7a Datasheet PDF File

For ohm-7a Found Datasheets File :: 766    Search Time::2.438ms    
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    MTP3N120E_D ON2600 MTP3N120E-D

ON Semiconductor
Part No. MTP3N120E_D ON2600 MTP3N120E-D
OCR Text ...MPERES 1200 VOLTS RDS(on) = 5.0 OHM (R) D G S CASE 221A-09, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) ...7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Pow...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS

File Size 178.47K  /  8 Page

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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTW14N50E_D ON2679 MTW14N50E
OCR Text ...MPERES 500 VOLTS RDS(on) = 0.40 OHM (R) D CASE 340K-01, Style 1 TO-247AE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rati...7a. Low Voltage Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motor...
Description TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
From old datasheet system

File Size 205.45K  /  8 Page

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    ON Semi
Part No. MTW8N60E_D ON2705
OCR Text ...MPERES 600 VOLTS RDS(on) = 0.55 OHM (R) D G S CASE 340K-01, Style 1 TO-247AE Value 600 600 20 40 8.0 6.4 24 180 1.43 - 55 to 1...7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Pow...
Description TMOS POWER FET 8.0 AMPERES 600 VOLTS
From old datasheet system

File Size 225.21K  /  8 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
OCR Text ...PERES 1000 VOLTS RDS(on) = 0.80 OHM (R) CASE 340G-02, STYLE 1 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drai...7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Pow...
Description TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    FDS8958 FDS8958NF073

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FDS8958 FDS8958NF073
OCR Text .... 0.09 RDS(ON), ON-RESISTANCE (OHM) 1.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7A VGS = 10V 1.6 ID = 7A 0.08 0.07 0.06 0.05 1.3 1.0 TA = 125 C 0.04 0.03 o 0.7 0.4 -50 TA = 25 C 0.02 o -25 ...
Description 30V Dual N & P-Channel PowerTrench MOSFET
From old datasheet system
Dual N & P-Channel PowerTrench MOSFET

File Size 230.71K  /  8 Page

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    ON Semi
Part No. MTP1N60E_D ON2561
OCR Text ...AMPERES 600 VOLTS RDS(on) = 8.0 OHM (R) D CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rati...7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Pow...
Description TMOS POWER FET 1.0 AMPERES 600 VOLTS
From old datasheet system

File Size 197.78K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FRM244D FN3230 FRM244R FRM244H
OCR Text Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AA Features * 12A, 250V, RDS(on) = 0.400 * Second Generation Rad Hard MOSFET Resu...7A VDD = 125V, ID = 12A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 25...
Description 12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 47.10K  /  6 Page

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    HSK2474J

Hi-Sincerity Mocroelectroni...
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HSK2474J
OCR Text ...n), Drain-Source On-Resistance (ohm) RDS(on), Drain-Source On-Resistance (ohm) 2.3 2.1 1.9 ID=1.3A 1.7 1.5 1.3 1.1 0.9 25 35 45 55 65 75 85 95 Tc, Case Temperature (C) 105 115 125 2.0 1.8 Typical On-Resistance & Drain-Current VGS=6V 1...
Description N-Channel MOSFETs

File Size 50.17K  /  5 Page

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    IRG4PH20K IRG4PH20

IRF[International Rectifier]
Part No. IRG4PH20K IRG4PH20
OCR Text ...istance ( ) , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10...7A C . 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2X 5.5 0 (.2 17) 4.5 0 (.1 77) 2 3 -C- ...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

File Size 221.44K  /  8 Page

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    Intersil
Part No. ITF87008DQT FN4814
OCR Text Ohm, Dual N-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 Features * Ultra Low On-Resistance - rDS(ON) = 0.023, VGS = 4.5V - r...7A 10 25 5 VGS = 1.5V 0 0 0.5 1.0 1.5 2.0 VDS , DRAIN TO SOURCE VOLTAGE (V) 20 15 1 2...
Description 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET
From old datasheet system

File Size 200.01K  /  12 Page

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For ohm-7a Found Datasheets File :: 766    Search Time::2.438ms    
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