|
|
![](images/bg04.gif) |
Advanced Power Electronics
|
Part No. |
AP0504GMT-HF-3
|
OCR Text |
... at t a =2 5 c e as single pulse avalanche energ y 4 t stg t j symbol value units rthj-c maximum thermal resistance, junction-case ...20a - - 8 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs f... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
File Size |
86.25K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
TY Semiconductor Co., Ltd
|
Part No. |
AOI538
|
OCR Text |
...eatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impe...20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d ... |
Description |
Trench Power AlphaMOS (αMOS LV) technology
|
File Size |
384.53K /
6 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|