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  rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625    Search Time::3.578ms    
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    FLL21E040IK

Eudyna Devices Inc
Part No. FLL21E040IK
OCR Text ... VDS IGF IGR Tch Condition RG=2 RG=2 Limit <28 <176 >-15.9 155 unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperatur...122.5 2.9 0.918 99.0 0.243 -90.1 0.002 -12.9 0.934 117.9 3 0.920 94.8 0.206 -96.9 0.002 -25.9 0.937 ...
Description High Voltage - High Power GaAs FET

File Size 367.92K  /  6 Page

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    FLL21E045IY

Eudyna Devices Inc
Part No. FLL21E045IY
OCR Text ... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <176 >-15.9 155 unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature ...122.79 0.033 -20.98 0.898 162.03 0.441 -135.80 6.693 171.86 0.040 -88.96 0.634 102.88 0.490 -131.54 ...
Description L,S-band High Power GaAs FET

File Size 302.71K  /  6 Page

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    FLL21E060IY

Eudyna Devices Inc
Part No. FLL21E060IY
OCR Text ... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <113.6 >-22.1 155 unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperatur...122.55 6.274 129.48 0.041 -137.37 0.388 -20.78 0.645 -124.52 5.836 121.87 0.037 -146.92 0.421 -39.36...
Description S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET

File Size 306.31K  /  6 Page

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    FLL21E090IY

Eudyna Devices Inc
Part No. FLL21E090IY
OCR Text ... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <352 >-31 155 unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc...122.64 127.43 122.24 113.26 111.46 73.076 15.023 4.6718 -10.341 -21.605 -31.755 -51.932 -66.043 -81....
Description L,S-band High Power GaAs FET

File Size 294.79K  /  7 Page

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    FLL21E180IU

Eudyna Devices Inc
Part No. FLL21E180Iu
OCR Text ... VDS IGF IGR Tch Condition RG=1 RG=1 Limit <28 <705 >-64 155 unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature ...122.0 0.017 -34.6 0.821 133.6 1.9 0.528 55.1 3.916 -158.4 0.023 -71.4 0.755 119.0 1.95 0.430 18.6 5....
Description High Voltage - High Power GaAs FET

File Size 152.05K  /  6 Page

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    NEC[NEC]
Part No. NE85600 NE85639R NE856 NE85618 NE85619 NE85630 NE85632 NE85633 NE85634 NE85635 NE85639 NE85639R-T1
OCR Text ... VCE = 10 V VO = 100 dBV/50 RG = RL = 50 -60 IM2 3 -50 2 -40 IM2 f = 90 + 100 MHz IM3 f = 2 X 200-190 MHz 1 1 2 3 5 7 10...122 143 174 87 129 149 171 -150 83 123 143 172 -152 -134 Rn/50 1.23 0.62 0.36 0.20 0.16 0.17 0.10 0....
Description NPN silicon high frequency transistor.
NECs NPN SILICON HIGH FREQuENCY TRANSISTOR

File Size 253.82K  /  25 Page

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    hitachi
Part No. PF0146
OCR Text ...3.2 W (at APC controlled), RL = Rg = 50 , Tc = 25C -- 45 -- -35 -45 3 -- -- -50 -60 2 4.2 VSWR (in) -- Pout (1) 3.6 -- ...122) 4.0 (0.158) 3.7 3.7 (0.146) (0.146) 1.0 0.25 2.1 (0.827) 2.9 (0.114) 19.8 (0....
Description From old datasheet system

File Size 91.36K  /  13 Page

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    2SK3060

NEC
Part No. 2SK3060
OCR Text ...Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all de...
Description Nch MOS FET for large current switching

File Size 89.52K  /  9 Page

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    2SK3060 2SK3060-S 2SK3060-Z 2SK3060-ZJ

NEC
Part No. 2SK3060 2SK3060-S 2SK3060-Z 2SK3060-ZJ
OCR Text ...Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all de...
Description TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263VAR 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 70A条(丁)|63VAR
MOS FIELD EFFECT TRANSISTOR

File Size 82.99K  /  8 Page

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    IRFI9610G

International Rectifier
Part No. IRFI9610G
OCR Text ...3 VDD = -100V ID = -2.0A ns RG = 24 VGS = -10V, See Fig. 10 D Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of di...122) -B13.70 (.540) 13.50 (.530) C D A 3X 1.40 (.055) 1.05 (.042) 0.90 (.035) 3X 0.70 (.028) 0.25...
Description HEXFET POWER MOSFET

File Size 167.03K  /  8 Page

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