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  rg-180 u Datasheet PDF File

For rg-180 u Found Datasheets File :: 4053    Search Time::1.594ms    
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    16CTQ80 16CTQ80-1 16CTQ80S 16CTQ100 16CTQ100-1 16CTQ100S 16CTQ 16CTQ060 16CTQ060-1 16CTQ060S 16CTQ080-1 16CTQ100STR 16CT

IRF[International Rectifier]
Part No. 16CTQ80 16CTQ80-1 16CTQ80S 16CTQ100 16CTQ100-1 16CTQ100S 16CTQ 16CTQ060 16CTQ060-1 16CTQ060S 16CTQ080-1 16CTQ100STR 16CTQ100STRL 16CTQ100STRR 16CTQ080STRR 16CTQ080S
OCR Text ...- speed switch irfp460 l dut rg = 25 ohm vd = 25 volt + (2) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power los...180 02468101214 dc allowable case temperature - (c) f( a v ) see note (2) sq u a r e w a v e ( d ...
Description    SCHOTTKY RECTIFIER
RG316 COAX CABLE SMB M TO SMB M - 10 FT
RG316 COAX CABLE SMA90D TO SMA M90D - 3 FT
IEEE 1284 TO uSB PRINTER CABLE BRIDGE
80V 16A Schottky Common Cathode Diode in a TO-262 package
100V 16A Schottky Common Cathode Diode in a TO-262 package
100V 16A Schottky Common Cathode Diode in a D2-Pak package
80V 16A Schottky Common Cathode Diode in a D2-Pak package

File Size 196.22K  /  8 Page

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    CPU165MU

IRF[International Rectifier]
Part No. CPu165Mu
OCR Text ...o -E m itter C u rre nt (A ) RG TC V CC VGE = 2 .0 = 150C = 4 80 V = 15 V 1000 VG E E 20 V G= T J = 12 5C 4.0 100 S A FE O P E R A TIN G A R E A 3.0 2.0 10 1.0 0.0 0 10 20 30 40 50 60 1 1 10 100 1000 ...
Description IGBT SIP MODuLE ultra-Fast IGBT

File Size 398.85K  /  8 Page

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    GA150TS60U

International Rectifier
Integrated Circuit Systems
Part No. GA150TS60u
OCR Text ... 25 C I C = 150A 100 RG =27;RG2 = 0 G1 = Ohm VGE = 15V VCC = 360V IC = 300 A IC = 150 A 20 10 IC = 75 A 15 10 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG1 Gate Resist...
Description HALF-BRIDGE IGBT INT-A-PAK ultra-FastTM Speed IGBT

File Size 221.41K  /  11 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60u
OCR Text ...7 6 5 0 10 20 30 40 50 RG G1 Gate Resistance (Ohm) R , , Gate Resistance ( ) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ... 2. VCE(PK) = 840V, TJ = 125oC, RG = 10 . Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES...180 190 0.95 1.3 MAX 250 3.5 2.4 3.5 250 120 150 26 16 240 220 1.3 1.6 uNITS V A A mA V V V nA A V n...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...180 160 140 120 100 80 60 40 20 0 0 DuTY CYCLE < 0.5%, VGE = 15V PuLSE DuRATION = 250s TC = -5...
Description 27A, 600V, uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...180 160 140 120 100 80 60 40 20 0 0 DuTY CYCLE <0.5%, VGE = 15V PuLSE DuRATION = 250s TC = -55...
Description From old datasheet system
27A, 600V, uFS Series N-Channel IGBTs
27A/ 600V/ uFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...180 160 600 450 uNITS V A A mA V V V nA A V nC nC ns ns ns ns J J Collector to Emitter Breakdown ...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ... 3. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...180 160 600 450 25 20 280 200 1300 800 0.75 uNITS ns ns ns ns J J J ns ns ns ns J J J oC/W Typic...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND

INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
Part No. HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text ... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25 . Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES...180 280 400 640 MAX 250 2 2.4 3.5 250 55 75 30 16 250 350 500 700 uNITS V A A mA V V V nA A V nC nC ...
Description From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247

File Size 86.05K  /  7 Page

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