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  rg-6 Datasheet PDF File

For rg-6 Found Datasheets File :: 36025    Search Time::5.14ms    
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    PCHMB100B12A1

Nihon Inter Electronics Corporation
Part No. PCHMB100B12A1
OCR Text ... g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 6 g = 10 = 15v . . ? ?`?`??`? ...
Description 100A 1200V

File Size 186.84K  /  3 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    PCHMB100B121

Nihon Inter Electronics Corporation
Part No. PCHMB100B121
OCR Text ... g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 6 g = 10 = 15v . . ? ?`?`??`? ...
Description 100A 1200V

File Size 186.83K  /  3 Page

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    MPF102-D

ON Semiconductor
Part No. MPF102-D
OCR Text ... reverse transfer admittance (y rg ) common gate characteristics admittance parameters (v dg = 15 vdc, t channel = 25 c) f, frequency (mh...6 0.5 0.4 0.3 0.04 0.5 0.4 0.3 0.2 1.0 0.9 0.8 0.7 0.6 0.03 0.02 0.01 0.0 0.01 0.02 0.03 0.04 0.1 90...
Description JFET VHF Amplifier N-Channel - Depletion

File Size 168.78K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...N-Channel VDD = 10V, ID = 1.0A, RG = 6.0, RD = 10 ns P-Channel VDD = -10V, ID = -1.0A, RG = 6.0, RD = 10 N-Channel V GS = 0V, VDS = 15V, = 1.0MHz pF P-Channel V GS = 0V, VDS = -15V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coeffici...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    MMBF5484LT1-D

ON Semiconductor
Part No. MMBF5484LT1-D
OCR Text ... reverse transfer admittance (y rg ) common gate characteristics admittance parameters (v dg = 15 vdc, t channel = 25 c) f, frequency (mh...6 0.5 0.4 0.3 0.04 0.5 0.4 0.3 0.2 1.0 0.9 0.8 0.7 0.6 0.03 0.02 0.01 0.0 0.01 0.02 0.03 0.04 0.1 90...
Description JFET Transistor N-Channel
Small Signal JFET

File Size 173.50K  /  8 Page

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    STEVAL-ISV001V1

STMicroelectronics
Part No. STEVAL-ISV001V1
OCR Text ... r24 d10 d8 r22 s l1 rg 1 rg l1 s h1 c26 c2 +15 ic l6386 sd 2 vcc 4 lin 1 hvg 1 gnd 8 hin 3 cin 6 diag 5 nc 1 sg n 7 lv 9 out 1 nc 1 vboot 1 rg h2 rg l 2 s l2 s h2 c3 g h1 c33 +15 g l2 ...
Description 1000 W dual stage DC-AC converter demonstration board based on the STP160N75F3

File Size 297.56K  /  6 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...D = -30V --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 270 --- VGS = 0V 170 --- pF VDS = -25V 31 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...-30V 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 570 --- VGS = 0V 36...6.3 V TJ = 25C, IS = -11A, VGS = 0V --- 100 200 ns TJ = 25C, IF = -11A --- 320 640 nC di/dt = 100A/...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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For rg-6 Found Datasheets File :: 36025    Search Time::5.14ms    
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