...ementary to 2SD875
Unit: mm
s Features
q q q
4.50.1 1.60.2
1.50.1
Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion th...
s Features
q q
5.00.2
4.00.2
High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter vol...
Description
Silicon PNP epitaxial planer type(For low-frequency amplification) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
s Features
q q q
2.8 -0.3 0.650.15
+0.2
+0.25 1.5 -0.05
0.650.15
2
1.1 -0.1
Parameter Collector to base voltage Collec...4 -0.05
Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at th...
....2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltag...4.10.2
High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...2SD968 and 2SD968A
Unit: mm
s Features
q q
2.60.1
4.50.1 1.60.2
1.50.1
0.4max.
45
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symb...
....2 2.00.2 3.50.1
Unit: mm
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed c...
...-3.0 -2.0 -3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C = -4 A, IB...
...
2.8 -0.3
+0.2
Unit: mm
s Features
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
s Absolute Maximum Ratings
Parameter Collec...4 150 -150 -185 -5 130 130 450 330 -1 V MHz pF mV min typ max -1 Unit A V V
Emitter to base volta...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
....2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
P...4.10.2
High collector to emitter voltage VCEO. Large collector power dissipation PC. M type packa...
Description
Silicon PNP epitaxial planer type(For low-frequency output amplification) 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR