semiconductor TECHNICAL DATA
Order this document by MRF175LU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N-Channel Enha...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
semiconductor TECHNICAL DATA
Order this document by MRF176GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N-Channel Enha...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
semiconductor TECHNICAL DATA
Order this document by MRF275G/D
The RF MOSFET Line
Power Field-Effect Transistor
N-Channel Enhanceme...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
Description
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
semiconductor, Inc. 128K x 8 SRAM
WITH DUAL CHIP ENABLE
AVAILABLE AS MILITARY SPECIFICATIONS
*SMD 5962-89598 *MIL-STD-883
NC A16 A14 A12...metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications...
Description
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
... and double side cooling of the semiconductor elements. The Z7A outline POW-R-BRIKTM uses 33mm or 38mm elements and the Z9A outline POW-R-BR...metal case. The metal case is anodized and provides added voltage isolation capability if not damage...
Description
Phase Control Modules (345-800 Amperes/400-3000 Volts) 相位控制模块45-800 Amperes/400-3000伏特
... enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer mus...
Description
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
... enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer mus...
Description
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
...ry high-performance metal-oxide semiconductor (CHMOS) process Additional process and reliability information is available in Intel's Components Quality and Reliability Handbook (order number 210997) All thermal impedance data is approximate...