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  semiconductor metal Datasheet PDF File

For semiconductor metal Found Datasheets File :: 8550    Search Time::2.516ms    
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    MRF175LV MRF175LU

MACOM[Tyco Electronics]
Part No. MRF175LV MRF175LU
OCR Text semiconductor TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enha...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 143.35K  /  8 Page

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    MRF176 MRF176GU MRF176GV

MOTOROLA[Motorola, Inc]
Part No. MRF176 MRF176GU MRF176GV
OCR Text semiconductor TECHNICAL DATA Order this document by MRF176GU/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enha...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 176.10K  /  10 Page

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    MRF275G MRF275

MOTOROLA[Motorola, Inc]
Part No. MRF275G MRF275
OCR Text semiconductor TECHNICAL DATA Order this document by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhanceme...metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (...
Description 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

File Size 224.47K  /  12 Page

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    MT5C1008 MT5C1008C-20_883C MT5C1008C-20L_883C MT5C1008C-25_883C MT5C1008C-25L_883C MT5C1008C-35_883C MT5C1008C-35L_883C

AUSTIN[Austin Semiconductor]
ASI[Advanced Semiconductor]
Part No. MT5C1008 MT5C1008C-20_883C MT5C1008C-20L_883C MT5C1008C-25_883C MT5C1008C-25L_883C MT5C1008C-35_883C MT5C1008C-35L_883C MT5C1008C-45_883C MT5C1008C-45L_883C MT5C1008C-55_883C MT5C1008C-55L_883C MT5C1008C-70_883C MT5C1008C-70L_883C MT5C1008CW-20_883C MT5C1008CW-20L_883C MT5C1008CW-25_883C MT5C1008CW-25L_883C MT5C1008CW-35_883C MT5C1008CW-35L_883C MT5C1008CW-45_883C MT5C1008CW-45L_883C MT5C1008CW-55_883C MT5C1008CW-55L_883C MT5C1008CW-70_883C MT5C1008CW-70L_883C MT5C1008DCJ-20_883C MT5C1008DCJ-20L_883C MT5C1008DCJ-25_883C MT5C1008DCJ-25L_883C MT5C1008DCJ-35_883C MT5C1008DCJ-35L_883C MT5C1008DCJ-45_883C MT5C1008DCJ-45L_883C MT5C1008DCJ-55_883C MT5C1008DCJ-55L_883C MT5C1008DCJ-70_883C MT5C1008DCJ-70L_883C MT5C1008EC-20_883C MT5C1008EC-20L_883C MT5C1008EC-25_883C MT5C1008EC-25L_883C MT5C1008EC-35_883C MT5C1008EC-35L_883C MT5C1008EC-45_883C MT5C1008EC-45L_883C MT5C1008EC-55_883C MT5C1008EC-55L_883C MT5C1008EC-70_883C MT5C1008EC-70L_883C MT5C1008ECA-20_883C MT5C1008ECA-20L_883C MT5C1008ECA-25_883C MT5C1008ECA-25L_883C MT5C1008ECA-35_883C MT5C1008ECA-35L_883C MT5C1008ECA-45_883C MT5C1008ECA-45L_883C MT5C1008ECA-55_883C MT5C1008ECA-55L_883C MT5C1008ECA-70_883C MT5C1008ECA-70L_883C MT5C1008F
OCR Text semiconductor, Inc. 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS *SMD 5962-89598 *MIL-STD-883 NC A16 A14 A12...metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications...
Description 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

File Size 173.97K  /  17 Page

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    P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1

Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
Part No. P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1Z7ABR700W P1Z9AAR900W P1Z9ACR900W P1Z9ADR900V P2Z9AAA900W P2Z9ACA900W P3Z7AAT800W P3Z7ABT700W P3Z7ABT800W P3Z7ACT800W P3Z9AAT900W P3Z9ABT900W P7Z7ABC700W P7Z9AAB900W P7Z9AAC900W
OCR Text ... and double side cooling of the semiconductor elements. The Z7A outline POW-R-BRIKTM uses 33mm or 38mm elements and the Z9A outline POW-R-BR...metal case. The metal case is anodized and provides added voltage isolation capability if not damage...
Description Phase Control Modules (345-800 Amperes/400-3000 Volts) 相位控制模块45-800 Amperes/400-3000伏特

File Size 92.04K  /  6 Page

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    2SC3809

NEC[NEC]
Part No. 2SC3809
OCR Text ... enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer mus...
Description NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

File Size 33.51K  /  4 Page

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    2SC3810

NEC[NEC]
Part No. 2SC3810
OCR Text ... enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer mus...
Description NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

File Size 33.27K  /  4 Page

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    8XC151SA 8XC151SB

INTEL[Intel Corporation]
Part No. 8XC151SA 8XC151SB
OCR Text ...ry high-performance metal-oxide semiconductor (CHMOS) process Additional process and reliability information is available in Intel's Components Quality and Reliability Handbook (order number 210997) All thermal impedance data is approximate...
Description HIGH-PERFORMANCE CHMOS MICROCONTROLLER

File Size 574.48K  /  33 Page

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