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  to262-7 Datasheet PDF File

For to262-7 Found Datasheets File :: 321    Search Time::1.437ms    
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    SPP15N60C3 SPP15N60C309 SPI15N60C3

Infineon Technologies AG
Infineon Technologies A...
Part No. SPP15N60C3 SPP15N60C309 SPI15N60C3
OCR Text ...Tjmax RDS(on) ID PG-TO220FP PG-TO262 650 0.28 15 PG-TO220 V A * PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minut...7.5A, VDD=50V 45 460 0.8 15 20 30 156 15 A mJ Avalanche energy, repetitive tAR limited by T...
Description New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Cool MOS?Power Transistor

File Size 682.06K  /  14 Page

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    IPB051NE8NG10 IPI05CNE8NG IPP054NE8NG

Infineon Technologies AG
Part No. IPB051NE8NG10 IPI05CNE8NG IPP054NE8NG
OCR Text ...ing PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. ...
Description OptiMOS?? Power-Transistor Features N-channel, normal level 175 掳C operating temperature
OptiMOS? Power-Transistor Features N-channel, normal level 175 °C operating temperature

File Size 496.75K  /  11 Page

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    IPB05CN10NG10

Infineon Technologies AG
Part No. IPB05CN10NG10
OCR Text ...ing PG-TO263-3 05CN10N PG-TO262-3 05CN10N PG-TO220-3 05CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. ...
Description OptiMOS鈩? Power-Transistor

File Size 436.25K  /  11 Page

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    IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG

Infineon Technologies AG
Part No. IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG
OCR Text ...ing PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteri...
Description OptiMOS鈩? Power-Transistor

File Size 432.34K  /  11 Page

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    IPB08CN10NG10 IPI08CN10NG

Infineon Technologies AG
Part No. IPB08CN10NG10 IPI08CN10NG
OCR Text ...ing PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. ...
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 406.74K  /  11 Page

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    IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG

Infineon Technologies AG
Part No. IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG
OCR Text ...10N PG-TO252-3 12CN10N PG-TO262-3 12CN10N PG-TO220-3 12CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 250 8 Typ. ...
Description OptiMOS鈩? Power-Transistor Features N-channel, normal level Very low on-resistance R DS

File Size 503.58K  /  12 Page

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    IPB80N03S4L-0310 IPI80N03S4L-04 IPP80N03S4L-04

Infineon Technologies AG
Infineon Technologies A...
Part No. IPB80N03S4L-0310 IPI80N03S4L-04 IPP80N03S4L-04
OCR Text ...valanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 Package PG-TO263-3-2 PG-TO262...7 60 100 5 4.7 3.7 3.4 nA m Rev. 2.1 page 2 2010-03-08 IPB80N03S4L-03 IPI80N03S4L-04...
Description OptiMOS-T2 Power-Transistor

File Size 159.25K  /  9 Page

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    IPB123N10N3G IPI126N10N3G IPP126N10N3G

Infineon Technologies AG
Part No. IPB123N10N3G IPI126N10N3G IPP126N10N3G
OCR Text ...10N PG-TO263-3 123N10N PG-TO262-3 126N10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain curre...7 0.1 3.5 1 A V - 10 1 11.0 100 100 12.6 nA m - 13.6 23.5 - 10.7 12.3 ...
Description OptiMOSTM3 Power-Transistor

File Size 344.22K  /  11 Page

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    IPB200N15N3 IPB200N15N3G IPD200N15N3G IPI200N15N3G IPP200N15N3G

Infineon Technologies AG
Part No. IPB200N15N3 IPB200N15N3G IPD200N15N3G IPI200N15N3G IPP200N15N3G
OCR Text ...15N PG-TO252-3 200N15N PG-TO262-3 200N15N PG-TO220-3 200N15N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 60 14 6 13 31 79 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=50 A, T...
Description OptiMOS鈩? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 549.55K  /  12 Page

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    IPB200N25N3G IPP200N25N3G IPI200N25N3G

Infineon Technologies AG
Part No. IPB200N25N3G IPP200N25N3G IPI200N25N3G
OCR Text ...25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain curre...7 13 64 4.2 135 86 179 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=64 ...
Description OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 421.11K  /  11 Page

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