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![HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI HY62VT08081E-DPC HY62VT08081E-DPE HY62VT08081E-DPI HY62VT08081E-DTC H](Maker_logo/hynix_semiconductor.GIF)
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
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Part No. |
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI HY62VT08081E-DPC HY62VT08081E-DPE HY62VT08081E-DPI HY62VT08081E-DTC HY62VT08081E-DTE HY62VT08081E-DTI HY62UT0808 HY62KT08081E-DTI HY62KT08081E HY62KT08081E-DGC HY62KT08081E-DGE HY62KT08081E-DGI HY62KT08081E-DPC HY62KT08081E-DPE HY62KT08081E-DPI HY62KT08081E-DTC HY62KT08081E-DTE HY62UT08081E-DGC HY62UT08081E-DGE HY62UT08081E-DGI HY62UT08081E-DPC HY62UT08081E-DPE HY62UT08081E-DPI HY62UT08081E-DTC HY62UT08081E-DTE HY62UT08081E-DTI HY62KT08081E-DT70E HY62KT08081E-DT10E HY62KT08081E-DT10C HY62KT08081E-DT70C HY62KT08081E-DT10I HY62KT08081E-DP10I HY62KT08081E-DP10E HY62KT08081E-DG70C HY62KT08081E-DG70E HY62KT08081E-DG10E HY62KT08081E-DG10C HY62KT08081E-DP10C HY62KT08081E-DG10I HY62VT08081E-DG10E HY62VT08081E-DP10E HY62KT08081E-DG70I HY62UT08081E-DT10I HY62UT08081E-DT10C HY62VT08081E-DT10E HY62VT08081E-DT10I HY62VT08081E-DT10C HY62VT08081E-DT85C HY62KT08081E-DT85C HY62UT08081E-DT85C HY62UT08081E-DG10I HY62UT08081E-DP10I HY62UT08081E-DP10C HY62UT08081E-DG10C HY62UT08081E-DT70I HY62UT08081E-DP70C HY62UT08081E-DT85I HY62UT08081E-DT70C HY62VT08081E-DT70I HY62VT08081E-DP85C HY62KT08081E-DG85I HY62UT08081E
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Description |
Low Power slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power slow SRAM - 256K x8|3.3V|70/85/100|Low Power slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
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File Size |
190.56K /
12 Page |
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Mitsubishi Electric Corporation
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Part No. |
CR8PM-12 CR8PM-8
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Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED type, glass PASSIVATION type
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File Size |
71.52K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
CR6PM-12 CR6PM-8
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Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED type, glass PASSIVATION type
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File Size |
76.68K /
5 Page |
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it Online |
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![3404.0044.XX 3404.0019.XX 3404.0014.XX 3404.0043.XX 3404.0017.XX OMF125 3404.0008.XX 3404.0048.XX 3404.0018.XX 3404.0007](Maker_logo/schurter_inc.GIF)
SCHURTER AG Schurter Inc.
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Part No. |
3404.0044.XX 3404.0019.XX 3404.0014.XX 3404.0043.XX 3404.0017.XX OMF125 3404.0008.XX 3404.0048.XX 3404.0018.XX 3404.0007.XX 3404.0047.XX 3404.0049.XX 3404.0010.XX 3404.0011.XX 3404.0012.XX 3404.0013.XX 3404.0015.XX 3404.0016.XX 3404.0020.XX 3404.0045.XX 3404.0021.XX 3404.0006.XX 3404.0003.XX 3404.0004.XX 3404.0005.XX 3404.0009.XX 3404.0046.XX 3404.0020.11 3404.0018.24
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Description |
FAST blow ELECTRIC FUSE, 6.3A, 125VAC, 125VDC, 100A (IR), SURFACE MOUNT FUSE, SMD, 125V, 8A; Current, fuse rating:8A; Voltage rating, AC:125V; Fuse type, blowing characteristic:Quick Acting F RoHS Compliant: Yes FAST blow ELECTRIC FUSE, 8A, 125VAC, 125VDC, 100A (IR), SURFACE MOUNT Surface Mount Fuse, 7.4 x 3.1 mm, Quick-Acting F, 125 VAC, 125 VDC
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File Size |
418.79K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
CR6CM
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Description |
MEDIUM POWER USE NON-INSULATED type/ glass PASSIVATION type MEDIUM POWER USE NON-INSULATED type, glass PASSIVATION type
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File Size |
63.78K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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